With the diminishing return from Moore’s Law, system-technology co-optimization (STCO) has emerged as a promising approach to sustain the scaling trends in the VLSI industry. By bridging the gap between system requirements and technology innovations, STCO enables customized optimizations for application-driven system architectures. However, existing research lacks sufficient discussion on efficient STCO methodologies, particularly in addressing the information gap across design hierarchies and navigating the expansive cross-layer design space. To address these challenges, this paper presents Orthrus, a dual-loop automated framework that synergizes system-level and technology-level optimizations. At the system level, Orthrus employs a novel mechanism to prioritize the optimization of critical standard cells using system-level statistics. It also guides technology-level optimization via the normal directions of the Pareto frontier efficiently explored by Bayesian optimization. At the technology level, Orthrus leverages system-aware insights to optimize standard cell libraries. It employs a neural network-assisted enhanced differential evolution algorithm to efficiently optimize technology parameters. Experimental results on 7nm technology demonstrate that Orthrus achieves 12.5% delay reduction at iso-power and 61.4% power savings at iso-delay over the baseline approaches, establishing new Pareto frontiers in STCO.

This work proposes a statistical modeling approach for the artificial neural network (ANN)-based compact model (CM). The method of retaining part of the network features of the nominal device and further finetuning the network parameters (variational neurons) is found to accurately reproduce the static variation. A mapping from process variation to network parameters is derived by combining the proposed variational neuron selection algorithm and the backward propagation of variance (BPV) method. In addition, a secondary classification of the selected variational neurons is applied to model the fabrication-induced correlation between n- and p-type devices. The neural network-based statistical modeling approach has been well implemented and verified on the GAA simulation data and the 16nm node foundry FinFET, which indicates its great potential in modeling emerging and advanced device technology.