Spin-transfer torque magnetic random access memory (STT-MRAM) is a promising cache memory candidate due to its high density, low leakage power, and nonvolatility. Multilevel cell (MLC) STT-MRAM can further increase density by storing 2 bits in one cell’s hard and soft domain, respectively. However, MLC STT-MRAM suffers two-step write, leading to high write energy, long latency, and severe lifetime degradation. Current encoding techniques propose to encode the new data to reduce the two-step data writes. However, they have two weaknesses: 1) high area overhead, e.g., recent work TSE (Hsieh et al., 2020) needs extra 37.5% MLCs and 2) prolong the write latency due to an extra read. Therefore, we propose enhanced one-step write (EOSwrite) to write data in one step. EOSwrite includes line bypassing and four intraline encoding techniques. Line bypassing schemes can bypass the writes to zero or clean lines, leading to low write/read latency. As for the intraline techniques, we propose four write modes. They utilize the data patterns and the clean data in cache lines to write data in one step, therefore reducing the data write latency. The key idea of one-step write is to write as much data as possible in the soft domain of MLC STT-MRAM. EOSwrite can greatly relieve the weaknesses of the current encoding schemes. Evaluation results show that EOSwrite can improve the lifetime of MLC STT-MRAM by 56.96%, reduce dynamic energy by 33.95%, reduce access latency by 36.95%, and improve system performance of MLC STT-MRAM by 4.30%, respectively. While the area overhead of EOSwrite is only 7.27%.

Approximate computing applications lead to large energy consumption and performance demand for the memory system. However, traditional SRAM based cache cannot satisfy these demands due to high leakage power and limited density. Spin Transfer Torque Magnetic RAM (STT-MRAM) is a promising candidate of cache due to low leakage power and high density. However, STT-MRAM suffers from high write energy. To leverage the ability of tolerating acceptable quality loss via approximations to data, we propose an STT-MRAM based APProximate cache architecture (APPcache) to write/read approximate data thus largely reducing energy. We find many similar elements (e.g. pixels in images) existing in cache lines while running approximate computing applications. Therefore, APPcache uses several lightweight similarity-based encoding schemes to eliminate the similar elements to reduce the data size thus reducing the write energy of STT-MRAM based cache. Besides, we design a software interface to manually control the output quality. APPcache can significantly eliminate similar elements, thus improving energy efficiency. Experimental results show that our scheme can reduce write energy and improve the image raw data compression ratio by 21.9% and 38.0% compared with the state-of-the-art scheme with 1 % error rate, respectively. As for the output quality, the losses of all benchmarks are within 5% with 1 % error rate.

Memory encryption can enhance the security of Non-volatile memories (NVMs), but it significantly increases the data bits written to NVMs and leads to severe lifetime and performance degradation. Current encryption techniques aim to reduce the re-encryption to many existing clean words, which unfortunately suffer from high encryption overheads (i.e. latency and energy) and many unnecessary writes. In the meantime, compression techniques can reduce the writes of encrypted NVM. However, we find that they may destroy the data patterns and increase the modified words, resulting in many encryptions in secure NVM. In this paper, we propose the MORphable Encryption and Encoding (MORE2) scheme to address these problems. Our MORphable Encryption (MORE) technique aims to reduce the full-line re-encryption and avoid clean line encryption. Besides, MORE proposes a prediction-based write scheme to avoid the encryption of clean lines, and pre-encrypt the lines that are predicted as dirty. Therefore, MORE can remove the encryption from the critical path of NVM. Furthermore, MORE2proposes the Morphable Selective Encoding (MSE) scheme to compress the modified words while preserving clean words. MORE2encrypts all metadata with the line counter to guarantee high security. Experimental results show that MORE2reduces the bit flips of encrypted NVM by 53.5 %, decreases the access latency by 27.32%, improves the IPC performance by 12.1 %, and reduces the write energy by 29.1 % compared with the state-of-the-art design.

Resistive memory is promising to be constructed as a high-density storage-class memory. Multilevel cell, access-transistor-free cross-point array structure, and 3-D array integration are three approaches to scale up the density of resistive memory. However, composing the three approaches together strengthens the interactions between array-level and cell-level nonidealities (interconnect resistance-induced IR drop, sneak current, and device variability) of resistive memory arrays during write operations and significantly degrades write performance and reliability. In this article, we analyze the dynamic voltage-dividing effect along a selected write current path in 3-D cross-point memory arrays. We propose a nonideality-tolerant high-density resistive memory (HD-RRAM) architecture, that can weaken the interactions between nonidealities and mitigate their degradation effects on the performance and reliability of array multilevel write operations. HD-RRAM is equipped with a double-transistor array architecture with two-transistor- n-resistor (2TnR) cell organization along pillars to reduce the current driving requirement and the large undesired voltage drop across each vertical pillar access transistor. Moreover, multiside asymmetric bias improves the resistive switching velocity by leveraging current-dividing effects. Variability-aware multilevel state partition reduces the worst-case write error rate by leveraging target state dependency of variability. Proportional-control multilevel state tuning reduces the average number of required write-and-verify iterations by leveraging pulse amplitude dependency of variability. Multilevel cell parallel writing improves the cell-level parallelism by leveraging the pass-through feature of intermediate resistance states. The evaluations show that HD-RRAM reduces both memory access latency and energy consumption over an aggressive baseline.

The integrity tree is a crucial part of the secure non-volatile memory (NVM) system design. For NVM with large capacity, the SGX-style integrity tree (SIT) is practical due to its parallel updates and variable arity. However, employing SIT in secure NVM is not easy. This is because the secure metadata SIT must be strictly persisted or restored after a sudden power¬loss, which unfortunately incurs unacceptable run-time overhead or recovery time. In this paper, we propose PSIT, a metadata persistency solution for SIT-protected secure NVM with high performance and fast restoration. PSIT utilizes the observation that for a lazily updated SIT, the lost tree nodes after a crash can be recovered by the corresponding child nodes in the NVM. It reduces the persistency overhead of the SIT nodes through a restrained write-back meta-cache and leverages the SIT inter¬layer dependency for recovery. Experiments show that compared to ASIT, a state-of-the-art secure NVM using SIT, PSIT decreases write traffic by 47% and improves the performance by 18% on average while maintaining an acceptable recovery time.

Emerging nonvolatile memories (NVMs) are promising to replace DRAM as main memory. However, NVMs suffer from limited write endurance and high write energy. Encoding method reduces the bit flips of NVMs by exploiting additional tag bits to encode the data. The effect of the encoding method is limited by the capacity overhead of the tag bits. In this article, we propose to exploit the space saved by compression to store the tag bits of the encoding method. We observe that the saved space size of each compressed cache line varies, and different encoding methods have different tradeoffs between capacity overhead and effect. To fully exploit the space saved by compression for improving lifetime, we select the proper encoding method according to the saved space size. To improve the compression coverage and compression ratio, we select an efficient compression scheme from two compression algorithms and provide more space for data encoding. Still, some data patterns cannot be compressed by any compression technique. We use the Flip-N-Write with 3.1% capacity overhead to encode uncompressible cache lines. The experimental results show that our scheme reduces the bit flips by 32.5%, decreases the energy consumption by 22.6% and improves the lifetime by 69.9% with 3.5% capacity overhead.

Non-volatile memories (NVMs) are vulnerable to serious threat due to the endurance variation. We identify a new type of malicious attack, called Uniform Address Attack (UAA), which performs uniform and sequential writes to each line of the whole memory, and wears out the weaker lines (lines with lower endurance) early. Experimental results show that the lifetime of NVMs under UAA is reduced to 4.1% of the ideal lifetime. To address such attack, we propose a spare-line replacement scheme called Max-WE (Maximize the Weak lines' Endurance). By employing weak-priority and weak-strong-matching strategies for spare-line allocation, Max-WE is able to maximize the number of writes that the weakest lines can endure. Furthermore, Max-WE reduces the storage overhead of the mapping table by 85% through adopting a hybrid spare-line mapping scheme. Experimental results show that Max-WE can improve the lifetime by 9.5X with the spare-line overhead and mapping overhead as 10% and 0.016% of the total space respectively.

Data encoding methods have been proposed to alleviate the high write energy and limited write endurance disadvantages of Non-Volatile Memories (NVMs). Encoding methods are proved to be effective through theoretical analysis. Under the data patterns of workloads, existing encoding methods could become inefficient. We observe that the new cache line and the old cache line have many redundant (or unmodified) words. This makes the utilization ratio of the tag bits of data encoding methods become very low, and the efficiency of data encoding method decreases. To fully exploit the tag bits to reduce the bit flips of NVMs, we propose REdundant word Aware Data encoding (READ). The key idea of READ is to share the tag bits among all the words of the cache line and dynamically assign the tag bits to the modified words. The high utilization ratio of the tag bits in READ leads to heavy bit flips of the tag bits. To reduce the bit flips of the tag bits in READ, we further propose Sequential flips Aware Encoding (SAE). SAE is designed based on the observation that many sequential bits of the new data and the old data are opposite. For those writes, the bit flips of the tag bits will increase with the number of tag bits. SAE dynamically selects the encoding granularity which causes the minimum bit flips instead of using the minimum encoding granularity. Experimental results show that our schemes can reduce the energy consumption by 20.3%, decrease the bit flips by 25.0%, and improve the lifetime by 52.1%.

Parity based RAID suffers from poor small write performance due to heavy parity update overhead. The recently proposed method EPLOG constructs a new stripe with updated data chunks without updating old parity chunks. However, due to skewness of data accesses, old versions of updated data chunks often need to be kept to protect other data chunks of the same stripe. This seriously hurts the efficiency of recovering system from device failures due to the need of reconstructing the preserved old data chunks on failed devices.

Resistive Memory (ReRAM) is promising to be used as high density storage-class memory by employing Triple-Level Cell (TLC) and crossbar structures. However, TLC crossbar ReRAM suffers from high write latency and energy due to the IR drop issue and the iterative program-and-verify procedure. In this paper, we propose Tiered-ReRAM architecture to overcome the challenges of TLC crossbar ReRAM. The proposed Tiered-ReRAM consists of three components, namely Tiered-crossbar design, Compression-based Incomplete Data Mapping (CIDM), and Compression-based Flip Scheme (CFS). Specifically, based on the observation that the magnitude of IR drops is primarily determined by the long length of bitlines in Double-Sided Ground Biasing (DSGB) crossbar arrays, Tiered-crossbar design splits each long bitline into the near and far segments by an isolation transistor, allowing the near segment to be accessed with decreased latency and energy. Moreover, in the near segments, CIDM dynamically selects the most appropriate IDM for each cache line according to the saved space by compression, which further reduces the write latency and energy with insignificant space overhead. In addition, in the far segments, CFS dynamically selects the most appropriate flip scheme for each cache line, which ensures more high resistance cells written into crossbar arrays and effectively reduces the leakage energy. For each compressed cache line, the selected IDM or flip scheme is applied on the condition that the total encoded data size will never exceed the original cache line size. The experimental results show that, on average, Tiered-ReRAM can improve the system performance by 30.5%, reduce the write latency by 35.2%, decrease the read latency by 26.1%, and reduce the energy consumption by 35.6%, compared to an aggressive baseline.

Emerging computational resistive memory is promising to overcome the challenges of scalability and energy efficiency that DRAM faces and also break through the memory wall bottleneck. However, cell-level and array-level nonideal properties of resistive memory significantly degrade the reliability, performance, accuracy, and energy efficiency during memory access and analog computation. Cell-level nonidealities include nonlinearity, asymmetry, and variability. Array-level nonidealities include interconnect resistance, parasitic capacitance, and sneak current. This review summarizes practical solutions that can mitigate the impact of nonideal device and circuit properties of resistive memory. First, we introduce several typical resistive memory devices with focus on their switching modes and characteristics. Second, we review resistive memory cells and memory array structures, including 1T1R, 1R, 1S1R, 1TnR, and CMOL. We also overview three-dimensional (3D) cross-point arrays and their structural properties. Third, we analyze the impact of nonideal device and circuit properties during memory access and analog arithmetic operations with focus on dot-product and matrix-vector multiplication. Fourth, we discuss the methods that can mitigate these nonideal properties by static parameter and dynamic runtime co-optimization from the viewpoint of device and circuit interaction. Here, dynamic runtime operation schemes include line connection, voltage bias, logical-to-physical mapping, read reference setting, and switching mode reconfiguration. Then, we highlight challenges on multilevel cell cross-point arrays and 3D cross-point arrays during these operations. Finally, we investigate design considerations of memory array peripheral circuits. We also portray an unified reconfigurable computational memory architecture.

Emerging Non-Volatile Memories (NVMs) such as Phase Change Memory (PCM) and Resistive RAM (RRAM) are promising to replace traditional DRAM technology. However, they suffer from limited write endurance and high write energy consumption. Encoding methods such as Flip-N-Write, FlipMin and CAFO can reduce the bit flips of NVMs by exploiting additional capacity to store the tag bits of encoding methods. The effects of encoding methods are limited by the capacity overhead of the tag bits. In this paper, we propose COE to COmpress cacheline for Extending the lifetime of NVMs. COE exploits the space saved by compression to store the tag bits of data encoding methods. Through combining data compression techniques with data encoding methods, COE can reduce the bit flips with negligible capacity overhead. We further observe that the saved space size of each compressed cacheline varies, and different encoding methods have different tradeoffs between capacity overhead and effects. To fully exploit the space saved by compression for improving lifetime, we select the proper encoding methods according to the saved space size. Experimental results show that our scheme can reduce the bit flips by 14.2%, decrease the energy consumption by 11.8% and improve the lifetime by 27.5% with only 0.2% capacity overhead.

Phase Change Memory (PCM) has the potential to replace traditional DRAM memory due to its better scalability and non-volatility. However, PCM also suffers from high write latency and energy consumption. To mitigate the write overhead of PCM-based main memory, we propose a Fine-grained Dirtiness Aware (FDA) last-level cache (LLC) victimization scheme. The key idea of FDA is to preferentially evict cachelines with fewer dirty words when victimizing dirty cachelines. The modified word is defined to be dirty. FDA exploits two key observations. First, the write service time of a cacheline is proportional to the number of dirty words. Second, a cacheline with fewer dirty words has the same or lower reference frequency compared with other dirty cachelines. Therefore, evicting cachelines with fewer dirty words can reduce the write service time of cachelines and will not increase the miss rate. To reduce the write service time of cachelines, FDA evicts the cacheline with the fewest dirty words when victimizing dirty cachelines. We also present FDARP to decrease the miss rate by further synergizing the number of dirty words with Re-reference Prediction Value. Experimental results show that FDA (FDARP) can improve the IPC performance by 8.3% (14.8%), decrease the write service time of cachelines by 37.0% (36.3%) and reduce write energy consumption of PCM by 27.0% (32.5%) under the mixed benchmarks.

Parity-based RAID provides system-level fault tolerance. However, parity updates caused by small writes introduce lots of extra I/Os, degrading I/O performance and wearing SSDs out. It has been proposed to use Non-Volatile Memory (NVM) as a parity cache on an SSD RAID to postpone parity updates until the whole stripe has been updated. However, this often fails because of skewed distribution of hot data chunks within a stripe. In real workloads, it is often difficult to achieve a full-stripe update even after a long delay. In this paper, we propose a Correlation aware parity caching scheme, called Cap, for SSD-based RAIDs. The key idea behind Cap is to periodically reconstruct correlated hot data chunks into a new stripe. Since these data chunks have a strong correlation, they tend to be updated together within a short time span. This co-update within a stripe more efficiently utilizes the parity cache to convert partial-stripe updates into a full-stripe update. We have implemented Cap on a RAID-5 SSD array in Linux Kernel 4.3. Experimental results show that Cap improves the I/O bandwidth by 54%~145% compared with the Linux software RAID. Compared with the state-of-the-art parity caching scheme PPC, Cap improves the I/O bandwidth by 14%~31%.

Resistive Random Access Memory (RRAM) technology is proposed as a promising replacement candidate for DRAM-based main memory due to its good scalability, low standby power, and non-volatility. The structure of Triple-Level Cell (TLC) can offer higher data density over Single-Level Cell (SLC). However, TLC RRAM suffers from high write energy and latency. Data compression techniques can reduce the size of the data to store. In contrast, data encoding methods such as Incomplete Data Mapping (IDM) can 'expand' the size for latency and energy reduction. We observe that the compression ratio of each cacheline varies, and therefore the saved space of each compressed cacheline is different. On the other hand, we find that different IDMs have different tradeoffs in capacity and write latency/energy. To fully exploit the space saved by compression for reducing the write latency/energy, and improving the performance of TLC RRAM-based main memory system, Compression-Ratio-Aware Data Encoding (CRADE) is proposed. The key idea of CRADE is to dynamically select the best-performing IDM according to the compression ratio of each cacheline. The cacheline is compressed first, and then the compressed cacheline is encoded by IDM. For each compressed cacheline, the IDM which uses the fewest states to encode is applied on the condition that the encoded data size will not exceed the cacheline size. Experimental results show that CRADE can reduce the write energy by 15%, decrease the write latency by 19%, reduce the read latency by 4%, and improve the IPC performance by 2% compared with the state-of-the-art scheme.

Multi Level Cell (MLC) Spin Transfer Torque RAM (STT-RAM) provides higher density than Single Level Cell (SLC) STT-RAM by storing two digital bits in a single cell, and is proposed as a promising candidate for on-chip cache. However, MLC STT-RAM suffers from high write energy. We observe that general encoding methods, which map the frequent data patterns to the energy-efficient resistance states, cannot reduce the write energy of MLC STT-RAM. To reduce the write energy of MLC STT-RAM, we propose a novel encoding method, i.e., Encoding Separately (ES). The key idea of ES is to encode the hard bits and soft bits of MLCs separately. The hard bits are encoded for fewer hard-bit writes (hard transitions) and soft bits are encoded for fewer soft-bit writes (soft transitions). Specifically, existing encoding methods commonly used in SLC can be applied to MLC STT-RAM when encoding the two bits separately. We further apply two encoding methods for SLC to MLC STT-RAM through encoding separately, and experimental results show that the proposed scheme can reduce the writes to hard bits and soft bits by 28% and 16%, and achieve an energy reduction of 25%.