Demo Data from EDBT 2026 / reviewers in the wild / expert
Yutong Fan
dblp:370/2055
· DBLP profile ↗
1ranked-venue papers
1as first author
1since 2021 · last 2023
—ORCID · unresolved
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 1 · 1 first-author · 1 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 3 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices
device design |
0.7 | 1 | 2023 | High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation · Sci. China Inf. Sci. 2023 |
Integrated circuit design › semiconductor devices
GaN HEMT |
0.7 | 1 | 2023 | High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation · Sci. China Inf. Sci. 2023 |
Integrated circuit design
power semiconductor devices |
0.7 | 1 | 2023 | High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation · Sci. China Inf. Sci. 2023 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2023 | High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation
Yutong Fan, Ren Huang, Shenglei Zhao |
Sci. China Inf. Sci. | 1 |