DRAM is a critical component of modern computing systems. Recent works propose numerous techniques (that we call DRAM techniques) to enhance DRAM-based computing systems’ throughput, reliability, and computing capabilities (e.g., in-DRAM bulk data copy). Evaluating the system-wide benefits of DRAM techniques is challenging as they often require modifications across multiple layers of the computing stack. Prior works propose FPGA-based platforms for rapid end-to-end evaluation of DRAM techniques on real DRAM chips. Unfortunately, existing platforms fall short in two major aspects: (1) they require deep expertise in hardware description languages, limiting accessibility; and (2) they are not designed to accurately model modern computing systems.We introduce EasyDRAM, an FPGA-based framework for rapid and accurate end-to-end evaluation of DRAM techniques on real DRAM chips. EasyDRAM overcomes the main drawbacks of prior FPGA-based platforms with two key ideas. First, EasyDRAM removes the need for hardware description language expertise by enabling developers to implement DRAM techniques using a high-level language (C++). At runtime, EasyDRAM executes the high-level software-defined memory system design in a programmable memory controller. Second, EasyDRAM tackles a fundamental challenge in accurately modeling modern systems: real processors typically operate at significantly higher clock frequencies than DRAM, a disparity that is difficult to replicate on FPGA platforms. EasyDRAM addresses this challenge by decoupling the processor–DRAM interface and advancing the system state using a novel technique we call time scaling, which faithfully captures the timing behavior of the modeled system.We validate EasyDRAM’s evaluation accuracy by comparing the memory latency profile of a real CPU-based system and its modeled implementation using EasyDRAM. We demonstrate the ease of use of EasyDRAM by evaluating two DRAM techniques end-to-end in a real FPGA-based system: (1) in-DRAM bulk data copy (i.e., RowClone) and (2) reduced-latency DRAM access that exploits the latency variation across DRAM cells. Implementing these two techniques requires no hardware modifications and only 325 lines of C++ code over EasyDRAM’s extensible code base. We compare our results to prior FPGA-based platforms. EasyDRAM yields more accurate results (e.g., by ≈20× for execution time) than the state-of-the-art related platform. We believe and hope that EasyDRAM will enable innovative ideas in memory system design to rapidly come to fruition. To aid future research, we open-source our EasyDRAM implementation at https://github.com/CMU-SAFARI/EasyDRAM.

Read disturbance in modern DRAM is an important robustness (security, safety, and reliability) problem, where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. Shrinking technology node size exacerbates DRAM read disturbance over generations. To help mitigate read disturbance, the latest DDR5 specifications (as of April 2024) introduced a new RowHammer mitigation framework, called Per Row Activation Counting (PRAC). PRAC 1) enables the DRAM chip to accurately track row activations by allocating an activation counter per row and 2) provides the DRAM chip with the necessary time window to perform RowHammer-preventive refreshes by introducing a new back-off signal. Unfortunately, no prior work rigorously studies PRAC’s security guarantees and overheads. In this paper, we 1) present the first rigorous security, performance, energy, and cost analyses of PRAC and 2) propose Chronus, a new mechanism that addresses PRAC’s two major weaknesses. Our analysis shows that PRAC’s system performance overhead on benign applications is non-negligible for modern DRAM chips and prohibitively large for future DRAM chips that are more vulnerable to read disturbance. We identify two weaknesses of PRAC that cause these overheads. First, PRAC increases critical DRAM access latency parameters due to the additional time required to increment activation counters. Second, PRAC performs a constant number of preventive refreshes at a time, making it vulnerable to an adversarial access pattern, known as the wave attack, and consequently requiring it to be configured for significantly smaller activation thresholds. To address PRAC’s two weaknesses, we propose a new on-DRAM-die RowHammer mitigation mechanism, Chronus. Chronus 1) updates row activation counters concurrently while serving accesses by separating counters from the data and 2) prevents the wave attack by dynamically controlling the number of preventive refreshes performed. Our performance analysis shows that Chronus’s system performance overhead is near-zero for modern DRAM chips and very low for future DRAM chips. Chronus outperforms three variants of PRAC and three other state-of-the-art read disturbance solutions. We discuss Chronus’s and PRAC’s implications for future systems and foreshadow future research directions. To aid future research, we open-source our Chronus implementation at https://github.com/CMU-SAFARI/Chronus.

Modern DRAM chips are subject to read disturbance errors. These errors manifest as security-critical bitflips in a victim DRAM row that is physically nearby a repeatedly activated (opened) aggressor row (RowHammer) or an aggressor row that is kept open for a long time (RowPress). State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold ($R D T$) (e.g., the number of aggressor row activations needed to induce the first RowHammer or RowPress bitflip) of every DRAM row (of which there are millions or billions in a modern system) to prevent read disturbance bitflips securely and with low overhead. We experimentally demonstrate for the first time that the RDT of a DRAM row significantly and unpredictably changes over time. We call this new phenomenon variable read disturbance (VRD). Our extensive experiments using 160 DDR4 chips and 4 HBM2 chips from three major manufacturers yield three key observations. First, it is very unlikely that relatively few RDT measurements can accurately identify the RDT of a DRAM row. The minimum RDT of a DRAM row appears after tens of thousands of measurements (e.g., up to 94,467), and the minimum RDT of a DRAM row is $3.5 \times$ smaller than the maximum RDT observed for that row. Second, the probability of accurately identifying a row’s RDT with a relatively small number of measurements reduces with increasing chip density or smaller technology node size. Third, data pattern, the amount of time an aggressor row is kept open, and temperature can affect the probability of accurately identifying a DRAM row’s RDT. Our empirical results have implications for the security guarantees of read disturbance mitigation techniques: if the RDT of a DRAM row is not identified accurately, these techniques can easily become insecure. We discuss and evaluate using a guardband for RDT and error-correcting codes for mitigating read disturbance bitflips in the presence of RDTs that change unpredictably over time. We conclude that $a\gt 10 \%$ guardband for the minimum observed RDT combined with SECDED or Chipkill-like SSC error-correcting codes could prevent read disturbance bitflips at the cost of large read disturbance mitigation performance overheads (e.g., 45% performance loss for an RDT guardband of $50 \%$). We hope and believe future work on efficient online profiling mechanisms and configurable read disturbance mitigation techniques could remedy the challenges imposed on today’s read disturbance mitigations by the variable read disturbance phenomenon.

Read disturbance in modern DRAM chips is a widespread weakness that is used for breaking memory isolation, one of the fundamental building blocks of system security and privacy. RowHammer is a prime example of read disturbance in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victim rows). Unfortunately, shrinking technology node size exacerbates RowHammer and as such, significantly fewer accesses can induce bitflips in newer DRAM chip generations. To ensure robust DRAM operation, state-of-the-art mitigation mechanisms restore the charge in potential victim rows (i.e., they perform preventive refresh or charge restoration). With newer DRAM chip generations, these mechanisms perform preventive refresh more aggressively and cause larger performance, energy, or area overheads. Therefore, it is essential to develop a better understanding and in-depth insights into the preventive refresh to secure real DRAM chips at low cost. In this paper, our goal is to mitigate RowHammer at low cost by understanding the preventive refresh latency and the impact of reduced refresh latency on RowHammer. To this end, we present the first rigorous experimental study on the interactions between refresh latency and RowHammer characteristics in real DRAM chips. Our experimental characterization using 388 real DDR4 DRAM chips from three major manufacturers demonstrates that a preventive refresh latency can be significantly reduced (by 64%) at the expense of requiring slightly more (by 0.54%) preventive refreshes. To investigate the impact of reduced preventive refresh latency on system performance and energy efficiency, we reduce the preventive refresh latency and adjust the aggressiveness of existing RowHammer solutions by developing a new mechanism, Partial Charge Restoration for Aggressive Mitigation (PaCRAM). Our results show that by reducing the preventive refresh latency, PaCRAM reduces the performance and energy overheads induced by five state-of-the-art RowHammer mitigation mechanisms with small additional area overhead. Thus, PaCRAM introduces a novel perspective into addressing RowHammer vulnerability at low cost by leveraging our experimental observations. To aid future research, we open-source our PaCRAM implementation at https://github.com/CMU-SAFARI/PaCRAM.

In this work, we experimentally demonstrate that it is possible to generate true random numbers at high throughput and low latency in commercial off-the-shelf (COTS) DRAM chips by leveraging simultaneous multiple-row activation (SiMRA) via an extensive characterization of 96 DDR4 DRAM chips. We rigorously analyze SiMRA's true random generation potential in terms of entropy, latency, and throughput for varying numbers of simultaneously activated DRAM rows (i.e., 2, 4, 8, 16, and 32), data patterns, temperature levels, and spatial variations. Among our 11 key experimental observations, we highlight four key results. First, we evaluate the quality of our TRNG designs using the commonly-used NIST statistical test suite for randomness and find that all SiMRA-based TRNG designs successfully pass each test. Second, 2-, 8-, 16-, and 32-row activation-based TRNG designs outperform the state-of-theart DRAM-based TRNG in throughput by up to 1.15×, 1.99×, 1.82×, and 1.39×, respectively. Third, SiMRA's entropy tends to increase with the number of simultaneously activated DRAM rows. For example, for most of the tested modules, the average entropy of 32-row activation is 2.51× higher than that of 2-row activation. Fourth, operational parameters and conditions (e.g., data pattern and temperature) significantly affect entropy. For example, increasing temperature from 50°C to 90°C decreases SiMRA's entropy by 1.53× for 32-row activation. To aid future research and development, we open-source our infrastructure at https://github.com/CMU-SAFARI/SiMRA-TRNG.

Processing-using-DRAM (PuD) is a promising paradigm for alleviating the data movement bottleneck using a DRAM array's massive internal parallelism and bandwidth to execute very wide dataparallel operations.Performing a PuD operation involves activating multiple DRAM rows in quick succession or simultaneously, i.e., multiple-row activation.Multiple-row activation is fundamentally different from conventional memory access patterns that activate one DRAM row at a time.However, repeatedly activating even one DRAM row (e.g., RowHammer) can induce bitflips in unaccessed DRAM rows because modern DRAM is subject to read disturbance, a worsening safety, security, and reliability issue.Unfortunately, no prior work investigates the effects of multiple-row activation, as commonly used by PuD operations, on DRAM read disturbance.In this paper, we present the first characterization study of read disturbance effects of multiple-row activation-based PuD (which we call PuDHammer) using 316 real DDR4 DRAM chips from four major DRAM manufacturers.Our detailed characterization results covering various operational conditions and parameters (i.e., temperature, data patterns, access patterns, timing parameters, and spatial variation) show that 1) PuDHammer significantly exacerbates the read disturbance vulnerability, causing up to 158.58× reduction in the minimum hammer count required to induce the first bitflip (𝐻𝐶 𝑓 𝑖𝑟𝑠𝑡 ), compared to RowHammer, 2) PuDHammer is affected by various operational conditions and parameters, 3) combining RowHammer with PuDHammer is more effective than using

DRAM chips are increasingly vulnerable to read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or keeping open a DRAM row causes bitflips in nearby rows, due to DRAM density scaling.Attackers can exploit RowHammer bitflips in real systems to compromise security, which has motivated many prior works on RowHammer defenses.To enable such defenses, recent DDR specifications introduce new defense frameworks (e.g., PRAC and RFM).For robust (i.e., secure, safe, and reliable) operation, it is critical to analyze security implications of widely-adopted RowHammer defenses.Yet, no prior work analyzes the timing covert channel and side channel vulnerabilities RowHammer defenses introduce.This paper presents the first analysis and evaluation of timing covert channel and side channel vulnerabilities introduced by stateof-the-art RowHammer defenses.We demonstrate that RowHammer defenses' preventive actions (e.g., preventively refreshing potential victim rows) have two fundamental features that allow an attacker to exploit RowHammer defenses for timing leakage.First, preventive actions often reduce DRAM bandwidth availability because they block access to DRAM, thereby resulting in significantly longer memory access latencies.Second, users can intentionally trigger preventive actions because preventive actions highly depend on application memory access patterns.We introduce LeakyHammer, a new class of attacks that leverage the RowHammer defense-induced memory latency differences to establish communication channels between processes and leak secrets from victim processes.First, we build two covert channel attacks exploiting two state-of-the-art RowHammer defenses (i.e., PRAC and RFM), achieving 39.0 Kbps and 48.7 Kbps channel capacity.Second, we demonstrate a proof-of-concept website

Single-Instruction Multiple-Thread (SIMT) computing has enabled a revolution in graphics, high-performance computing, and artificial intelligence. However, despite its benefits in these domains, SIMT processing has been relegated to accelerators rather than becoming a feature of general-purpose computing. Although a number of recent works have explored the potential benefits of “G PSIMT,“ current research infrastructures to study high performance general-purpose CPUs provide no support for the SIMT architecture and its programming model. This work presents our initial efforts toward developing a full-system GPSIMT research infrastructure. We first describe how we extend the QEMU emulator with SIMT features, enabling ISA pathfinding for GPSIMT hardware and providing a platform for the rapid development of system software for GPSIMT. We then present our approach to leveraging the Chip yard hardware gen-eration framework to develop a full-system GPSIMT exploration platform on an FPGA by extending the RISC- V Rocket Core.

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g., refresh neighbor rows of the hammered row) that mitigate such bitflips to preserve memory isolation, a fundamental building block of security and privacy in modern computing systems. However, preventive actions induce non-negligible memory request latency and system performance overheads as they interfere with memory requests. As shrinking technology node size over DRAM chip generations exacerbates RowHammer, the overheads of RowHammer solutions become prohibitively expensive. As a result, a malicious program can effectively hog the memory system and deny service to benign applications by causing many RowHammer-preventive actions. In this work, we tackle the performance overheads of RowHammer solutions by tracking and throttling the generators of memory accesses that trigger RowHammer solutions. To this end, we propose BreakHammer. BreakHammer 1) observes the time-consuming RowHammer-preventive actions of existing RowHammer mitigation mechanisms, 2) identifies hardware threads that trigger many of these actions, and 3) reduces the memory bandwidth usage of each identified thread. As such, BreakHammer significantly reduces the number of RowHammer-preventive actions performed, thereby improving 1) system performance and DRAM energy, and 2) reducing the maximum slowdown induced on a benign application, with near-zero area overhead. Our extensive evaluations demonstrate that BreakHammer effectively reduces the negative performance, energy, and fairness effects of eight RowHammer mitigation mechanisms. To foster further research we open-source our BreakHammer implementation and scripts at https://github.com/CMU-SAFARI/BreakHammer.