Abstract The generation, processing, and measurement of microwave signals using optoelectronic technology on compact chips represent a significant trend in the evolution of microwave photonics (MWP). Among various platforms, silicon photonics has emerged as a leading choice, primarily due to its compatibility with established complementary metal-oxide-semiconductor (CMOS) processes. This compatibility enables the complete integration of high-performance radio frequency (RF) links while addressing key challenges such as size, power consumption, cost, and reliability. In this article, we review recent advancements in silicon-integrated microwave photonics, focusing on the developments of device-level integration and system-level applications. At the device level, we highlight critical innovations in silicon-based passive and active components towards MWP concerns, including ultralow-loss waveguides, high-fitness micro rings, large-bandwidth/high-linearity electro-optic modulators, hybrid/heterogeneous integrated lasers and amplifiers on silicon, frequency combs, and more. These breakthroughs form the basic foundation for advancing MWP system-level implementation. At the system-level applications, we concentrate on integrated MWP systems with diverse functionalities on silicon chips, including microwave signal generation, processing, programmable circuits, and measurement systems. Finally, we discuss current challenges and provide insights into the future of silicon-integrated MWP.

Abstract Over the past 70 years, the semiconductor industry has undergone transformative changes, largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.