Demo Data from EDBT 2026 / reviewers in the wild / expert
Dongxin Tan
dblp:377/8146
· DBLP profile ↗
4ranked-venue papers
0as first author
4since 2021 · last 2025
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 4 · 4 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
4 papers |
Memory systems · 40% Integrated circuit design · 36% Emerging computing paradigms · 20% | |
| Computer networks
1 paper |
Optical networks · 100% |
Topics — the 8 heaviest of 10, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Memory systems
non-volatile memory |
1.5 | 2 | 2024 | Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic · Sci. China Inf. Sci. 2024 Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors · Sci. China Inf. Sci. 2024 |
Emerging computing paradigms › neuromorphic computing
synaptic transistors |
0.9 | 1 | 2025 | Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors · Sci. China Inf. Sci. 2025 |
Integrated circuit design › emerging device technologies
ferroelectric field-effect transistor |
0.8 | 1 | 2024 | Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors · Sci. China Inf. Sci. 2024 |
Memory systems › non-volatile memory
ferroelectric memory |
0.8 | 1 | 2024 | Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic · Sci. China Inf. Sci. 2024 |
Emerging computing paradigms
neuromorphic computing |
0.3 | 1 | 2025 | Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors · Sci. China Inf. Sci. 2025 |
Integrated circuit design › emerging device technologies
emerging memory devices |
0.2 | 1 | 2024 | Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors · Sci. China Inf. Sci. 2024 |
Hardware accelerators and domain-specific architectures
in-sensor computing |
0.2 | 1 | 2024 | Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic · Sci. China Inf. Sci. 2024 |
Integrated circuit design
optoelectronic devices |
0.2 | 1 | 2024 | Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic · Sci. China Inf. Sci. 2024 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2025 | Electro-optic tuning in ferroelectric capacitor with photonic crystal nanobeam cavity
Danyang Yao, Dongxin Tan, Qiyu Yang, Xuetao Gan, Yue Hao 0001, Genquan Han |
Sci. China Inf. Sci. | 5 |
| 2025 | Ferroelectrically gated two-dimensional bismuth oxyselenides for strain-invariant flexible synaptic thin-film transistors
Zheng-Dong Luo, Dongxin Tan, Xuetao Gan, Zhufei Chu, Yinshui Xia, Genquan Han |
Sci. China Inf. Sci. | 4 |
| 2024 | Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors
Qiyu Yang, Zheng-Dong Luo, Dongxin Tan, Xuetao Gan, Zhufei Chu, Yinshui Xia, Genquan Han |
Sci. China Inf. Sci. | 6 |
| 2024 | Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic
Dongxin Tan, Cizhe Fang, Zheng-Dong Luo, Qiyu Yang, Xuetao Gan, Yue Hao 0001, Genquan Han |
Sci. China Inf. Sci. | 2 |