Demo Data from EDBT 2026 / reviewers in the wild / expert
Haidi Wu
dblp:377/8272
· DBLP profile ↗
2ranked-venue papers
0as first author
2since 2021 · last 2026
—ORCID · unresolved
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 2 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 100% |
Topics — the 7 heaviest of 7, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor devices
GaN HEMT |
1.0 | 1 | 2026 | Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy · Sci. China Inf. Sci. 2026 |
Integrated circuit design
semiconductor device fabrication |
1.0 | 1 | 2026 | Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy · Sci. China Inf. Sci. 2026 |
Integrated circuit design
emerging device technologies |
0.8 | 1 | 2024 | Two-dimensional materials for future information technology: status and prospects · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices › semiconductor device design
transistor design |
0.8 | 1 | 2024 | Two-dimensional materials for future information technology: status and prospects · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor device fabrication
epitaxy |
0.3 | 1 | 2026 | Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy · Sci. China Inf. Sci. 2026 |
Integrated circuit design
heterogeneous integration |
0.2 | 1 | 2024 | Two-dimensional materials for future information technology: status and prospects · Sci. China Inf. Sci. 2024 |
Integrated circuit design › 3d integration
monolithic 3d integration |
0.2 | 1 | 2024 | Two-dimensional materials for future information technology: status and prospects · Sci. China Inf. Sci. 2024 |
Methods — techniques the papers use, named apart from their topics
quasi-van der waals epitaxy · 1.0machine learning for material growth · 0.8
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | Coordinated B diffusion Gaussian distribution AlGaN/GaN HEMT device by quasi-van der Waals epitaxy
Yanning Zhang 0001, Haidi Wu, Xinchen Ji, Zhichun Yang, Xinbo Zhang, Ling Bai, Juncheng Zheng, Yue Hao 0001, Jincheng Zhang 0001 |
Sci. China Inf. Sci. | 2 |
| 2024 | Two-dimensional materials for future information technology: status and prospectsabstractAbstract Over the past 70 years, the semiconductor industry has undergone transformative changes, largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research. Hao Qiu 0001, Zhihao Yu, Tiange Zhao, Mingsheng Xu, Taotao Li, Wenzhong Bao, Yang Chai, Shula Chen, Hui-Ming Cheng, Daoxin Dai, Zengfeng Di, Zhuo Dong, Xidong Duan, Yuhan Feng, Jingshu Guo, Pengwen Guo, Yue Hao 0001, Jingyi Hu, Weida Hu, Zehua Hu, Ali Imran 0004, Ziqiang Kong, Bilu Liu, Chunsen Liu, Guanyu Liu, Kaihui Liu, Donglin Lu, Likuan Ma, Feng Miao, Zhenhua Ni, Anlian Pan, Haowen Shu, Quanyang Tao, Ziao Tian, Haomin Wang 0005, Yeliang Wang, Haidi Wu, Hongzhao Wu, Jiangbin Wu, Yanqing Wu, Longfei Xia, Baixu Xiang, Luwen Xing, Qihua Xiong, Jeffrey Xu, Yang Xu 0035, Yuekun Yang, Jincheng Zhang 0001, Tao Zhang 0090, Xinbo Zhang, Chunsong Zhao, Yuda Zhao, Ting Zheng, Peng Zhou 0021, Shaohua Kevin Zhou, Deren Yang |
Sci. China Inf. Sci. | 66 |