The Internet of Things is promising as it drives the datafication of our everyday life and thus, leverages synergies between originally considered “dead” things and enables them to proactively serve humans. IoT5.0, an Artificial Intelligence assisted Internet of Things, could even more benefit society, as the devices could even learn how to provide more value. But the ubiquitous connectivity comes at a cost. Security levels have to rise tremendously to ensure a network stays secure and safe for humans. This additional effort often is a burden for small and medium sized enterprises as the complexity and security demands of such systems rise faster than available resources. Consequently., RESILIENT TRUST focuses on end-to-end security of IoT processing chains with a focus on strong exploitation for SMEs. Moreover, RESILIENT TRUST will address and significantly mitigate the major risks to enable IoT 5.0. That way., this project will be a driver for sustainable development and the generation of convenience and wealth. A solution is proposed to ensure end-to-end security by boosting RESILIENCE and TRUST along different key supply chains of IoT device.

This paper presents an innovative integrated load-pull bench at 160 GHz. The proposed system, which is designed in a 55-nm BiCMOS technology, is tailored to deal with all of the measurement functions including signal generation, shaping, and magnitude and phase measurement. This system will allow precise characterization of Devices-Under-Test (DUTs) (i.e., circuits and/or devices) when integrated together with the DUT. In addition, the proposed system could also be envisioned as a System-on-Chip (SoC) that, when reported into an RF probe, could serve as a test bench for any integrated circuit.

This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50-Ω load depending on a DC control voltage. Among other potential applications, this system can be used to implement a transfer switch or an attenuator. A demonstrator was fabricated and measured in the STM 55-nm BiCMOS technology. Over a wide bandwidth, from 55 GHz up to 170 GHz, experimental measurements demonstrate a maximum 1.6-dB of insertion loss when behaving as a Through connection and a minimum 14-dB of insertion loss when behaving as a 50-Ω load. In both cases, the return loss is better than 10 dB. The insertion loss at 90 GHz is 0.6 dB for the Through connection and 20 dB for the 50-Ω load connection.

This paper focused on nonlinear distortion modeling and characterization of AlGaN/GaN HEMT on SiC substrate using a two-tone intermodulation measurement. The variation of Taylor series coefficients with temperature: linear terms (Gmand Gds), nonlinear terms (Gm2, Gm3, Gds2, and Gds3), and the cross terms (Gmd, Gmd2, and Gm2d) are reported. Furthermore, in the saturation region, the magnitude of Gdsrelated linear, nonlinear, and cross terms (Gds, Gds2, Gds3, Gmd, Gmd2, and Gm2d) are found to be minimal. This implies that the nonlinear distortion behavior of the device is transconductance-dependent. A temperature-dependent current-based empirical model taking into account bias, input power, and frequency for the nonlinearity of the device has been developed based on two-tone measurements. The modeled data are consistent with the twotone measurements, providing an effective means for analyzing these devices.