EDBT 2026 Demo / reviewers in the wild / expert
Yachao Zhang 0002
dblp:40/10584-2
· DBLP profile ↗
5ranked-venue papers
0as first author
5since 2021 · last 2026
0000-0003-1864-6953ORCID · conflict
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 5 · 5 since 2021
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
4 papers |
Integrated circuit design · 100% |
Topics — the 8 heaviest of 9, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
analog and mixed-signal circuits |
1.8 | 2 | 2026 | First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs · Sci. China Inf. Sci. 2026 High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices
GaN HEMT |
0.9 | 2 | 2024 | 1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate · Sci. China Inf. Sci. 2023 High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices › heterostructure devices
high electron mobility transistor |
0.8 | 1 | 2024 | High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz · Sci. China Inf. Sci. 2024 |
Integrated circuit design
power electronics |
0.8 | 1 | 2024 | Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability · Sci. China Inf. Sci. 2024 |
Integrated circuit design
power semiconductor devices |
0.7 | 1 | 2023 | 1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate · Sci. China Inf. Sci. 2023 |
Integrated circuit design › semiconductor devices
semiconductor device physics |
0.3 | 1 | 2026 | First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs · Sci. China Inf. Sci. 2026 |
Integrated circuit design
semiconductor devices |
0.2 | 1 | 2024 | High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz · Sci. China Inf. Sci. 2024 |
Integrated circuit design › semiconductor devices
wide bandgap semiconductor devices |
0.2 | 1 | 2023 | 1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate · Sci. China Inf. Sci. 2023 |
Methods — techniques the papers use, named apart from their topics
heterogeneous integration · 1.0current collapse suppression · 0.8MISHEMT · 0.8
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | First demonstration of heterogeneous integrated limiter chip with breakdown-enhanced GaN SBDs
Jincheng Zhang 0001, Shudong Huo, Zhengxing Zhang, Mengjiao Xiang, Menghan Zheng, Yachao Zhang 0002, Xiufeng Song, Kui Dang, Yue Hao 0001 |
Sci. China Inf. Sci. | 7 |
| 2025 | Potential of boron nitride/diamond heterostructures for n- and p-type conduction
Jichao Hu, Zeyang Ren, Jiaduo Zhu, Yachao Zhang 0002, Yue Hao 0001 |
Sci. China Inf. Sci. | 10 |
| 2024 | Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability
Kui Dang, Zhilin Qiu, Shudong Huo, Peng Zhan, Huining Liu, Yachao Zhang 0002, Jincheng Zhang 0001 |
Sci. China Inf. Sci. | 6 |
| 2024 | High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz
Hanghai Du, Lu Hao, Yachao Zhang 0002, Kui Dang, Zan Li 0001, Jincheng Zhang 0001, Yue Hao 0001 |
Sci. China Inf. Sci. | 5 |
| 2023 | 1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate
Sheng-Lei Zhao, Jincheng Zhang 0001, Yachao Zhang 0002, Lansheng Feng, Xiufeng Song, Yixin Yao, Shengrui Xu, Yue Hao 0001 |
Sci. China Inf. Sci. | 3 |