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Weida Hu

dblp:40/2986 · DBLP profile ↗
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4ranked-venue papers
0as first author
3since 2021 · last 2025
0000-0001-5278-8969ORCID · corroborated

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 3 · 2 since 2021Graphics, computer vision, multimedia, augmented reality and games · 1 · 1 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
3 papers
Integrated circuit design · 100%

Topics — the 5 heaviest of 6, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
emerging device technologies
0.812024
Two-dimensional materials for future information technology: status and prospects · Sci. China Inf. Sci. 2024
Integrated circuit design › semiconductor devices › semiconductor device design
transistor design
0.812024
Two-dimensional materials for future information technology: status and prospects · Sci. China Inf. Sci. 2024
Integrated circuit design › emerging device technologies
ferroelectric field-effect transistor
0.512021
Interface engineering of ferroelectric-gated MoS2 phototransistor · Sci. China Inf. Sci. 2021
Integrated circuit design
heterogeneous integration
0.212024
Two-dimensional materials for future information technology: status and prospects · Sci. China Inf. Sci. 2024
Integrated circuit design › 3d integration
monolithic 3d integration
0.212024
Two-dimensional materials for future information technology: status and prospects · Sci. China Inf. Sci. 2024

Methods — techniques the papers use, named apart from their topics

machine learning for material growth · 0.8
YearPublicationVenuePosition
2025 Cross Image Feature Perturbation with Pseudo Label Fusion for Semi-Supervised Medical Image Segmentation
Minxia Xu, Weida Hu, Jinshui Miao, Erkang Cheng
WACV4
2024 Two-dimensional materials for future information technology: status and prospects
abstract
Abstract Over the past 70 years, the semiconductor industry has undergone transformative changes, largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional (2D) materials like transition metal dichalcogenides (TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.
Hao Qiu 0001, Zhihao Yu, Tiange Zhao, Mingsheng Xu, Taotao Li, Wenzhong Bao, Yang Chai, Shula Chen, Hui-Ming Cheng, Daoxin Dai, Zengfeng Di, Zhuo Dong, Xidong Duan, Yuhan Feng, Jingshu Guo, Pengwen Guo, Yue Hao 0001, Jingyi Hu, Weida Hu, Zehua Hu, Ali Imran 0004, Ziqiang Kong, Bilu Liu, Chunsen Liu, Guanyu Liu, Kaihui Liu, Donglin Lu, Likuan Ma, Feng Miao, Zhenhua Ni, Anlian Pan, Haowen Shu, Quanyang Tao, Ziao Tian, Haomin Wang 0005, Yeliang Wang, Haidi Wu, Hongzhao Wu, Jiangbin Wu, Yanqing Wu, Longfei Xia, Baixu Xiang, Luwen Xing, Qihua Xiong, Jeffrey Xu, Yang Xu 0035, Yuekun Yang, Jincheng Zhang 0001, Tao Zhang 0090, Xinbo Zhang, Chunsong Zhao, Yuda Zhao, Ting Zheng, Peng Zhou 0021, Shaohua Kevin Zhou, Deren Yang
Sci. China Inf. Sci.25
2021 Interface engineering of ferroelectric-gated MoS2 phototransistor
Shuaiqin Wu, Luqi Tu, Tie Lin, Weida Hu, Xiangjian Meng, Jianlu Wang, Junhao Chu
Sci. China Inf. Sci.10
2019 A study on ionic gated MoS2 phototransistors
Binmin Wu, Hongwei Tang, Tie Lin, Weida Hu, Xiangjian Meng, Wenzhong Bao, Jianlu Wang, Junhao Chu
Sci. China Inf. Sci.6