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Sang-uhn Cha

dblp:40/3190 · DBLP profile ↗
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2ranked-venue papers
2as first author
0since 2021 · last 2017
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 2 · 2 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Hardware reliability and fault tolerance · 54% Memory systems · 46%

Topics — the 5 heaviest of 5, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Memory systems
DRAM
0.312017
Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices · HPCA 2017
Hardware reliability and fault tolerance › memory fault tolerance
DRAM resilience
0.312017
Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices · HPCA 2017
Memory systems › DRAM
DRAM scaling
0.312017
Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices · HPCA 2017
Hardware reliability and fault tolerance › error correction › error-correcting codes
in-DRAM ECC
0.312017
Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices · HPCA 2017
Hardware reliability and fault tolerance › error-correcting codes for memory
rank-level ECC
0.112017
Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices · HPCA 2017

Methods — techniques the papers use, named apart from their topics

simulation · 0.3measurement · 0.3
YearPublicationVenuePosition
2017 Defect Analysis and Cost-Effective Resilience Architecture for Future DRAM Devices
abstract
Technology scaling has continuously improved the density, performance, energy efficiency, and cost of DRAM-based main memory systems. Starting from sub-20nm processes, however, the industry began to pay considerably higher costs to screen and manage notably increasing defective cells. The traditional technique, which replaces the rows/columns containing faulty cells with spare rows/columns, has been able to cost-effectively repair the defective cells so far, but it will become unaffordable soon because an excessive number of spare rows/columns are required to manage the increasing number of defective cells. This necessitates a synergistic application of an alternative resilience technique such as In-DRAM ECC with the traditional one. Through extensive measurement and simulation, we first identify that aggressive miniaturization makes DRAM cells more sensitive to random telegraph noise or variable retention time, which is dominantly manifested as a surge in randomly scattered single-cell faults. Second, we advocate using InDRAM ECC to overcome the DRAM scaling challenges and architect In-DRAM ECC to accomplish high area efficiency and minimal performance degradation. Moreover, we show that advancement in process technology reduces decoding/correction time to a small fraction of DRAM access time, and that the throughput penalty of a write operation due to an additional read for a parity update is mostly overcome by the multi-bank structure and long burst writes that span an entire In-DRAM ECC codeword. Lastly, we demonstrate that system reliability with modern rank-level ECC schemes such as single device data correction is further improved by hundred million times with the proposed In-DRAM ECC architecture.
Sang-uhn Cha, Seongil O, Hyunsung Shin, Sangjoon Hwang 0001, Kwang-Il Park, Seong-Jin Jang 0002, Joo-Sun Choi, Gyo-Young Jin, Young Hoon Son, Hyunyoon Cho, Jung Ho Ahn, Nam Sung Kim
HPCA1
2007 High Speed, Minimal Area, and Low Power SEC Code for DRAMs with Large I/O Data Widths
abstract
Many ECCs have been proposed to enhance the reliability of DRAMs, but most of them lack in the aspects of practical feasibility. We prioritize on how well and efficiently code could be actually implemented and propose high speed, minimal area, and low power SEC code for DRAMs with large I/O data widths. The proposed code minimizes the column weight, row weight and total weight of the H-matrix. Consequently, the area overhead and power consumption of the check bit generator are reduced by 17.7% at the most. The propagation delay is also decreased by reducing the level of XOR trees. Moreover, maximal power reduction is possible as the optimal H-matrix variants can be formulated to specifically tailor for various system applications with different spatial and temporal data correlations.
Sang-uhn Cha, Hongil Yoon
ISCAS1