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Cizhe Fang

dblp:403/2984 · DBLP profile ↗
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3ranked-venue papers
0as first author
3since 2021 · last 2025
0009-0005-9466-0919ORCID · corroborated

Domains — the database's venue-derived domains; a paper can count in several

Applied, interdisciplinary, general and emerging computing · 3 · 3 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
2 papers
Memory systems · 49% Integrated circuit design · 44% Hardware accelerators and domain-specific architectures · 7%
Computer networks
1 paper
Physical-layer communications · 100%

Topics — the 10 heaviest of 10, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
semiconductor device fabrication
0.912025
Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3-on-SiC substrates: evidence from pulsed measurements · Sci. China Inf. Sci. 2025
Physical-layer communications
metasurface
0.812024
Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum · Sci. China Inf. Sci. 2024
Physical-layer communications
modulation
0.812024
Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum · Sci. China Inf. Sci. 2024
Physical-layer communications
optical communication
0.812024
Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum · Sci. China Inf. Sci. 2024
Physical-layer communications › modulation
phase modulation
0.812024
Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum · Sci. China Inf. Sci. 2024
Memory systems › non-volatile memory
ferroelectric memory
0.812024
Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic · Sci. China Inf. Sci. 2024
Memory systems
non-volatile memory
0.812024
Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic · Sci. China Inf. Sci. 2024
Integrated circuit design › semiconductor devices
wide bandgap semiconductor devices
0.312025
Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3-on-SiC substrates: evidence from pulsed measurements · Sci. China Inf. Sci. 2025
Hardware accelerators and domain-specific architectures
in-sensor computing
0.212024
Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic · Sci. China Inf. Sci. 2024
Integrated circuit design
optoelectronic devices
0.212024
Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic · Sci. China Inf. Sci. 2024

Methods — techniques the papers use, named apart from their topics

pulsed characterization · 0.9
YearPublicationVenuePosition
2025 Dynamic performance enhancement in Ti/Au ohmic contacts on β-Ga2O3-on-SiC substrates: evidence from pulsed measurements
Shuqi Huang, Chunxiao Yu, Xiaole Jia, Bochang Li, Zheng-Dong Luo, Cizhe Fang, Tiangui You, Xin Ou, Genquan Han
Sci. China Inf. Sci.11
2024 Tunable lithium niobate metasurfaces for phase-only modulation based on quasi-bound states in the continuum
Ruoying Kanyang, Cizhe Fang, Yue Hao 0001, Genquan Han
Sci. China Inf. Sci.2
2024 Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic
Dongxin Tan, Cizhe Fang, Zheng-Dong Luo, Qiyu Yang, Xuetao Gan, Yue Hao 0001, Genquan Han
Sci. China Inf. Sci.3