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M. Latif

dblp:43/2313 · DBLP profile ↗
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1ranked-venue papers
1as first author
0since 2021 · last 1982
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 67% Electronic design automation · 33%

Topics — the 3 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design › analog and mixed-signal circuits › device modeling
bipolar transistor modeling		 0.011982
Network Analysis Approach to Multidimensional Modeling of Transistors Including Thermal Effects · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1982
Integrated circuit design › analog and mixed-signal circuits
device modeling		 0.011982
Network Analysis Approach to Multidimensional Modeling of Transistors Including Thermal Effects · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1982
Electronic design automation
electrothermal simulation		 0.011982
Network Analysis Approach to Multidimensional Modeling of Transistors Including Thermal Effects · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1982

Methods — techniques the papers use, named apart from their topics

numerical simulation · 0.0circuit network analysis · 0.0
YearPublicationVenuePosition
1982 Network Analysis Approach to Multidimensional Modeling of Transistors Including Thermal Effects
abstract
A comprehensive numerical model for simulating the electrical and thermal behavior of a bipolar transistor is developed. The proposed model is in the form of an electrical network for its easy implementation using a circuit analysis program. One of the suggested solution techniques enables us to simulate a fairly large problem with a reasonable amount of computer time. The effect of temperature dependence of thermal conductivity of the device material upon thermal instability is shown. It is described how the model can be used to find the appropriate values of ballasting resistors desired for the improvement of thermal stability. Prediction of a safe operating area using the proposed model is also reported.
M. Latif, P. R. Bryant
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1