As integrated circuit (IC) manufacturing technology pushes toward the deep submicron (DSM) regime, the interconnect behavior begins to dominate the overall chip performance. Traditional interconnect characterization methods do not offer the required accuracy or the versatility to tackle challenges of DSM design. We present a system for interconnect parasitic capacitance extraction using an extremely fast three-dimensional (3-D) solver, capable of handling general geometry configurations and providing high accuracy. The contributions in this work make 3-D field solvers an attractive and, for the first time, computationally feasible approach to calculating interconnect parasitics. The system represents a significant performance leap in 3-D interconnect characterization, making it well suited for full-chip extraction and for high-accuracy characterization of critical nets, block IP, and standard and custom cell designs.

Accurate electrostatic simulations are required for the analysis of micro electromechanical systems (MEMS) and interconnects in very large scale integration (VLSI) design. Typical simulations involve complex three-dimensional (3-D) geometries together with various dielectric materials, conductors, and boundary conditions. The boundary element method is well suited for such computations. For highly accurate solutions, the meshing of the geometry becomes increasingly important. A scheme is presented which allows generating an optimal mesh automatically based on a coarse initial discretization, e.g., a CAD model. An error indicator derived from boundary integral equations monitors the solution accuracy in each boundary element. H-type or p-type mesh refinement is applied to areas which contribute strongly to the overall error. The method applies to both two-dimensional (2-D) and 3-D simulations containing elements of various orders and shapes. The generated refined meshes result in significantly higher solution accuracy for a given simulation size.

The solution of Poisson's simulations in large, geometrically complex domains with various boundary conditions are of interest in many physical computations. In this paper, we focus on electrostatic analysis. This is important for microactuator (MEMS) and interconnect modeling and also in the simulation of the electrostatic properties in VLSI chips, such as CCD sensors and DRAM cells. The computation of the static electric potential and field distribution involves the solution of the Poisson's equation, or in case of charge free space, Laplace's equation. The boundary element method has proven to be well suited for the solution of these partial differential equations in both 2- and 3-D. The required computational resources can be significantly reduced with the use of multipole acceleration techniques. An enhanced multipole (MP) acceleration technique is presented, allowing for reduced computational time and memory requirements in all stages of the computational process: the assembly of the global system of equations, the solution of the system and the evaluation of the potential and flux at specified internal positions. Contrary to previous applications of MP acceleration to Poisson's equation, the method allows the treatment of a wider class of boundary conditions, including Neumann and floating. The method is applicable both in two and three dimensions using a constant or high order boundary elements.