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R. F. Vogel

dblp:48/2884 · DBLP profile ↗
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1ranked-venue papers
1as first author
0since 2021 · last 1985
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 77% Electronic design automation · 23%

Topics — the 5 heaviest of 5, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Electronic design automation
circuit simulation		 0.011985
Analytical MOSFET Model with Easily Extracted Parameters · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Integrated circuit design › analog and mixed-signal circuits
device modeling		 0.011985
Analytical MOSFET Model with Easily Extracted Parameters · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Integrated circuit design › analog and mixed-signal circuits › device modeling
device model parameter extraction		 0.011985
Analytical MOSFET Model with Easily Extracted Parameters · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOSFET model		 0.011985
Analytical MOSFET Model with Easily Extracted Parameters · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985
Integrated circuit design
analog and mixed-signal circuits		 0.011985
Analytical MOSFET Model with Easily Extracted Parameters · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1985

Methods — techniques the papers use, named apart from their topics

parameter extraction · 0.0analytical modeling · 0.0
YearPublicationVenuePosition
1985 Analytical MOSFET Model with Easily Extracted Parameters
abstract
A model for MOSFET's is presented which can accurately represent devices over a wide variety of process parameters, geometries, and regions of operation. The model is analytic in all regions, contains only 5 parameters, and is easily implemented in circuit simulation programs. Threshold shifts due to substrate bias for a wide variety of channel doping profiles can be represented by the unique mathematical function used in the expression for threshold voltage. Each parameter of the model dominates a specific region of the I-V curves, making the parameter extraction process a simpler matter of calculating each parameter from measurements in its own region of dominance. No optimization is needed. Curves generated by the model are compared with data from a specific process. Above threshold and subthreshold Id-Vds, threshold voltage versus substrate bias, and transconductance curves are presented.
R. F. Vogel
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1