A cost-effective route to build electrically as well as optically controlled modulators in silicon photonics is reviewed. The technology enables modulation at bit rates beyond 100 Gbit/s. This platform relies on the well-established silicon-based complementary metal-oxide-semiconductor processing technology for fabricating silicon-on-insulator (SOI) waveguides, while an organic cladding layer adds the required nonlinearity. The strength of this hybrid technology is discussed, and two key devices in communications are exemplarily regarded in more detail. The first device demonstrates demultiplexing of a 120 Gbit/s signal by means of four-wave mixing in a slot-waveguide that has been filled with a highly nonlinear chi(3)-organic material. The second device is a 100 Gbit/s/1 V electrooptic modulator based on a slow-light SOI photonic crystal covered with a chi(2)-nonlinear organic material.