Demo Data from EDBT 2026 / reviewers in the wild / expert
G. Rocca
dblp:53/180
· DBLP profile ↗
1ranked-venue papers
0as first author
0since 2021 · last 1984
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 87% Performance modeling and evaluation · 13% |
Topics — the 3 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › semiconductor process modeling
ion implantation |
0.0 | 1 | 1984 | Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1984 |
Integrated circuit design
semiconductor process modeling |
0.0 | 1 | 1984 | Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1984 |
Performance modeling and evaluation › simulation
monte carlo simulation |
0.0 | 1 | 1984 | Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron Device · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1984 |
Methods — techniques the papers use, named apart from their topics
monte carlo simulation · 0.0
| Year | Publication | Venue | Position |
|---|---|---|---|
| 1984 | Three-Dimensional Monte Carlo Simulations--Part I: Implanted Profiles for Dopants in Submicron DeviceabstractMonte Carlo methods are used to simulate implants. The results fall into two different groups. On one side, size-dependent effects due to the presence of the mask are analyzed and discussed. On the other side, physical mechanisms dependent on dose and energy, like channeling and transition crystal-amorphous, are briefly reviewed. A. M. Mazzone, G. Rocca |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. | 2 |