Demo Data from EDBT 2026 / reviewers in the wild / expert
Bo-Ru Ke
dblp:54/10063
· DBLP profile ↗
1ranked-venue papers
0as first author
0since 2021 · last 2011
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Memory systems · 50% Hardware reliability and fault tolerance · 25% Storage systems · 25% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Hardware reliability and fault tolerance › error correction
error-correcting codes |
0.1 | 1 | 2011 | Reliability analysis and improvement for multi-level non-volatile memories with soft information · DAC 2011 |
Storage systems › data representation › data encoding › error correction coding
LDPC codes |
0.1 | 1 | 2011 | Reliability analysis and improvement for multi-level non-volatile memories with soft information · DAC 2011 |
Memory systems › non-volatile memory › multi-level cell
multi-level cell memory |
0.1 | 1 | 2011 | Reliability analysis and improvement for multi-level non-volatile memories with soft information · DAC 2011 |
Memory systems
non-volatile memory |
0.1 | 1 | 2011 | Reliability analysis and improvement for multi-level non-volatile memories with soft information · DAC 2011 |
Methods — techniques the papers use, named apart from their topics
soft information · 0.1non-uniform reference voltages · 0.1LDPC codes · 0.1
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2011 | Reliability analysis and improvement for multi-level non-volatile memories with soft informationabstractThis paper presents the systematic methodology of error correction scheme using low-density parity check (LDPC) codes to improve the reliability and endurance of multi-level cell (MLC) non-volatile memories. Using our realistic error model, the LDPC architecture with the scheme of non-uniform reference voltages (NURV) is proposed to trade off among error correction capability, area, and throughput, which can improve the bit-error-rate significantly. Shih-Liang Chen, Bo-Ru Ke, Jian-Nan Chen, Chih-Tsun Huang |
DAC | 2 |