Complementary FET (CFET) is a promising device architecture that proceeds the CMOS scaling during the post-nanosheet device era. Among several CFET variants, Double-Row (DR) CFET further enables 15% track height scaling on standard cells, by sharing a middle row of vias, while sustaining an optimized Middle-Of-Line (MOL) process complexity. In this study, half-height double-row (hDR) CFET is proposed as a highly practical and impactful design style to overcome the cell and block level limitations of DR CFET architecture. First, hDR CFET introduces a high flexibility on standard cell layout design with significant area optimization. Secondly, hDR cell insertion in the backend physical design flow further optimizes the cell placement, and recovers block level area scaling to match the cell height scaling. Results on A7 CFET technology library show area reduction up to 50% on standard cell layouts. Moreover, block level PnR results after enabling only 6 types of hDR cells in standard cell library show 10% of area scaling on ARM Cortex-M0 32-bit core at 90% utilization, proving the strength of the concept. Finally, 14% of block level area scaling is further projected for an enriched standard cell library with an extended set of hDR cells.

The demand for high-capacity and energy-efficient memory solutions has surged in the era of data-centric computing, particularly for Artificial Intelligence (AI) and Machine Learning (ML) workloads. This paper introduces a novel memory architecture leveraging Charge-Coupled Device (CCD) technology, engineered in a sequential-access block memory configuration, to enhance Compute-near-Memory (CnM) systems. We propose an optimized 3D IGZO CCD block memory as an on-chip weight buffer for high-capacity CnM systems. Our approach achieves 2.95−131.26× improvement in area efficiency and 1.32−4.33× improvement in energy efficiency compared to SRAM solutions.

CMOS scaling involves more than just reducing the effective channel length—it has become increasingly complex. Aligning the circuit design ecosystem with semiconductor technology is now more critical than ever, giving rise to the Design-Technology Co-Optimization (DTCO) concept and further extending Moore’s Law. This live demonstration presents our previously published N2 nanosheet Pathfinding PDK (P-PDK) which provides insight into cutting-edge CMOS technology under the framework of DTCO. This session will cover the motivation behind developing this cutting-edge PDK, the basic flow of using the P-PDK, and the prospects of the P-PDK.

To continue increasing the storage density of 3D NAND flash memories, new technology options need to be evaluated early on. This work presents a unique predictive parametric framework for Multi-Level Cell 3D NAND Flash read operation at the array level. This framework is used to explore the read sensitivity to multiple parameters and technology options. We identify the trade-offs between number of layers, read-current and read time to be the most determinant factors to ensure the array readability while enabling stacks of more than 300 layers and maximizing the memory density.

In sub 10 nm nodes, the growing dominance of interconnects in chips poses challenges in designing large-size static random-access memory (SRAM) subarrays. The main issue is the write failure problem arising from the increased resistance and capacitance for bitline (BL) and wordline (WL). To tackle this issue, the SRAM subarray design incorporates conventional (Conv.) divided WL and divided BL techniques based on 14-Å-compatible (A14) nanosheet (NS) technology. This approach allows for various subarray sizes with successful write operations, resulting in improved subarray-level performance and power (PP). However, the additional logic gates come with an area penalty that may degrade the overall performance, power, and area (PPA) at the macro level due to increased inter-subarray interconnect overhead. To overcome this limitation, the active interconnect (AIC) design is proposed with the features of fabricating another or multiple active regions at the back-end of line (BEOL) layers. By moving these extra logic gates from front-end of line to BEOL in the AIC divided subarray design, the area penalty is significantly mitigated without compromising PP compared to the standard (Std.) and Conv. divided counterparts. To achieve this concept, carbon nanotube gate-all-around transistor is explored as potential BEOL-compatible device. In this research, a comprehensive design-technology co-optimization analysis is conducted to verify the value and potential benefits of up to 65% macro-level energy-delay-area product improvement by AIC divided subarray design compared to the Std. subarray design.