EDBT 2026 Demo / reviewers in the wild / expert
Hao Ding 0011
dblp:54/4139-11
· DBLP profile ↗
6ranked-venue papers
3as first author
6since 2021 · last 2026
0000-0002-5240-8839ORCID · conflict
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 6 · 3 first-author · 6 since 2021
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2026 | A Sparsity-Aware Reconfigurable Sensing-Quantization Circuit for RRAM-Based Analog Compute-in-Memory
Zhuoya Chen, Hao Ding 0011, Yunfan Yang, Haisu Zhang, Jinshan Li, Shigeng Zhao, Yunyi Fu, Zongwei Wang 0001, Yimao Cai |
ISCAS | 2 |
| 2026 | An IZO-Based 2T0C Compute-in-Memory Array with Adaptive Read Voltage Boosting for Energy-Efficient Edge AI
Hao Ding 0011, Jiye Li, Xiantong Qiu, Yunfan Yang, Gaoqi Yang, Shengdong Zhang, Zongwei Wang 0001, Yimao Cai |
ISCAS | 1 |
| 2026 | A 1.8-ns, 45fJ/bit Time-Domain Sensing Scheme with Offset-Cancelled Resistance-to-Time Converter and 10-5 BER for Digital RRAM Compute-in-Memory
Shigeng Zhao, Hao Ding 0011, Yunfan Yang, Jinshan Li, Zhuoya Chen, Xing Zhang 0002, Zongwei Wang 0001, Yimao Cai |
ISCAS | 2 |
| 2026 | REF-CIM: A 40-nm Non-Ideality Tolerant and Energy Efficient RRAM Compute-in-Memory Macro With Configurable Precision for Edge AI
Hao Ding 0011, Yunfan Yang, Zongwei Wang 0001, Jinshan Li, Lin Bao, Ling Liang 0003, Yimao Cai |
IEEE Trans. Circuits Syst. I Regul. Pap. | 1 |
| 2025 | SA-CIM: A 28nm 16Mb RRAM-based Sparsity-Aware Compute-In-Memory Macro for Edge AI Algorithm ProcessingabstractCompute-in-memory (CIM) for edge devices is usually constrained by on-chip resources, including on-chip memory and physical chip size, which hinders the deployment of more complex neural networks. By leveraging the sparsity of neural networks, the overall memory requirements and energy consumption can be reduced. However, Existing sparsity-aware architectures cannot achieve high energy efficiency due to off-chip sparsity control. This work proposes:1) Hybrid sparsity regulation strategy. The sparsity encoding and alignment circuit is designed and implemented, realizing on-chip sparsity detecting and encoding. 2) Sparsity-aware compute-in-memory (CIM) array based on RRAMs. The in-situ deployment of unstructured sparsity is implemented inside the CIM array, and the CIM array and sparsity are tightly coupled by sparsity read/write. This work demonstrates the design and evaluation of SA-CIM: a sparsity-aware CIM macro with 16Mb RRAM with fine-grained sparsity detecting and encoding capacity, achieving energy efficiency of 22.7TOP/W@8b/8b. Hao Ding 0011, Zongwei Wang 0001, Jinshan Li, Shigeng Zhao, Heting Gao, Junbo Ao, Ling Liang 0003, Yimao Cai, Ru Huang 0001 |
ISCAS | 1 |
| 2025 | HRC-CIM: Hybrid RRAM-Capacitor Cell based Compute-in-Memory with High Linearity, Parallelism and Energy EfficiencyabstractRRAM-based Compute-in-memory (CIM) has emerged as a promising computing paradigm for artificial intelligence (AI) algorithms. However, the low on/off ratio and high on-current have been the major challenges to enhance the accuracy, parallelism, and energy efficiency. In this paper, we propose a novel Hybrid RRAM-Capacitor (HRC) cell based CIM macro to address these issues. The proposed HRC cell achieves a high on-off ratio with sub-100nA on-current and eliminates direct current path during computation, which significantly enhances both parallelism and energy efficiency. The write-verify scheme for RRAM programming is optimized for HRC cell array, and is further supported by a quantization result calibration technique using a dummy column to ensure high linearity and accuracy in analog domain multiply-and-accumulate (MAC) operations. A HRC-CIM macro has been designed and demonstrated using 28nm technology node, enabling block-level parallelism across 64 rows with 4-bit input per row, and delivering an energy efficiency of up to 40.40 TOPS/W @8b-IN/8b-W. Jinshan Li, Zongwei Wang 0001, Hao Ding 0011, Yunfan Yang, Shigeng Zhao, Shengyu Bao, Ruiqing Xie, Zhuoya Chen, Yimao Cai, Ru Huang 0001 |
ISCAS | 3 |