Roc Berenguer

dblp:56/3824 · DBLP profile ↗
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14ranked-venue papers
0as first author
3since 2021 · last 2026
0000-0003-0313-7152ORCID · verified

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 14 · 3 since 2021
YearPublicationVenuePosition
2026 Two Low $Delay$ and Low $E$$_{$t$}$ Level Shifters With All-MOS Charge Pump and Feedback Control for High-Accuracy Sensor Applications
Quanzhen Duan, Shunqing Hu, Qinglun Chen, Yuhua Liang, Roc Berenguer, Yuemin Ding
IEEE Trans. Circuits Syst. I Regul. Pap.5
2026 A 0.52% Nonlinearity, 44.9 $\mathrm{zF}/\sqrt{\mathrm{Hz}}$ Input Capacitance Noise C/V Converter With the Proposed SA-MD Technique for MEMS Accelerometer
abstract
A 0.52% nonlinearity,$44.9zF/\sqrt {Hz}$input capacitance noise capacitance-to-voltage (C/V) converter for MEMS accelerometer is proposed in this study. The multi-step successive approximation (SA) output mechanism is proposed to replace the conventional single-step conversion. Meanwhile, combining with the modulation-demodulation (MD) technique in the traditional continuous-time (CT) C/V converter, a much lower nonlinearity and noise CT C/V converter without increasing power consumption is achieved in this work. In addition, a short time reset signal between modulation and demodulation is proposed to reset the integration capacitors in each conversion cycle, which lets the C/V converter achieve an approximate twice dynamic range enhancement (DRE). The proposed C/V converter is implemented in a standard 180 nm CMOS process. It incorporates an on-chip capacitor signal generator (CSG), whose capacitance is tuned from −80 fF to 80 fF using clock signals at frequencies of 10Hz, 1 kHz, 2 kHz, 3 kHz, 4 kHz, and 5 kHz respectively, where measurement results demonstrate that the converter has correct output voltage across this frequency range, with a conversion error of less than$350~ppm/\sqrt {Hz}$. The proposed C/V converter is also tested together with an integrated a MEMS accelerometer element. It achieves a maximum nonlinearity as low as 0.52% within ±10 g acceleration and obtains equivalent input noise power spectral density (PSD) as low as$44.9~zF/\sqrt {Hz}$when the frequency is beyond 50 Hz.
Zhizhong Jin, Quanzhen Duan, Roc Berenguer, Yuemin Ding, Donghua Chen
IEEE Trans. Circuits Syst. I Regul. Pap.4
2025 Area-Efficient SiGe BiCMOS LNA With Wideband Frequency Tuning Capability Across D and G Bands
abstract
This paper presents a compact differential low-noise amplifier (LNA) with frequency tuning capability implemented with IHP’s 0.13-$\mathrm {\mu }$m SG13G2 SiGe technology. Area efficiency is achieved with a semi-differential architecture, using compact transformers and avoiding the need of a Marchand balun. The frequency tuning capability is achieved with novel reconfigurable transformers that move the effective position of their center tap through 3 switches. The proposed reconfigurable transformers impose no penalty on the LNA performance, which shows a measured performance comparable to the State Of the Art. It covers at least from 140 GHz to 200 GHz with 5 different frequency operating modes and with a gain higher than 13 dB and a NF of 9.5 dB. Finally, temperature compensation biasing circuits are included to provide gain robustness against temperature, achieving a gain variation of less than 1.5 dB across −20 to$80~^{\circ } $C.
Alvaro Urain, David del Rio, Andoni Beriain, Héctor Solar, Roc Berenguer
IEEE Trans. Circuits Syst. I Regul. Pap.5
2016 Layout-aware design methodology for a 75 GHz power amplifier in a 55 nm SiGe technology
David del Rio, Iñaki Gurutzeaga, Héctor Solar, Andoni Beriain, Roc Berenguer
Integr.5
2012 A 150nW CMOS novel temperature sensor for remote patient monitoring based on an auto-resonant active inductor architecture
abstract
An ultra low power temperature sensor suitable for human body range monitoring has been implemented using a standard 2P4M 0.35 μm CMOS process. This sensor is based on a novel Time-to-Digital Converter (TDC) architecture, which makes use of an auto-resonant cascode gyrator-C active inductor. The fabricated sensor has an active area less than 200 μm × 300 μm. It has a 0.03 °C resolution and a ±0.15 °C inaccuracy and allows high data rates with a conversion time lower than 200 μs and a power consumption less than 150 nW @ 10 samples/s.
Erik Fernández, Héctor Solar, Joaquín de No, Iñaki Gutiérrez, Roc Berenguer
ISCAS5
2011 A progammable baseband anti-alias filter for a passive-mixer-based, SAW-less, multi-band, multi-mode WEDGE transmitter
abstract
A programmable baseband anti-alias filter (AAF) for a passive-mixer-based, 1.8V, SAW-less, multi-band, multi-mode WEDGE (WCDMA/HSUPA/EGPRS) cellular transmitter (TX) is described. This paper presents an AAF which results in ultra-low, -170dBc/Hz, receive-band noise, and enables the first single-mixer-based, multi-mode, SAW-less TX. By providing the noise and linearity performance only on-demand from system requirements, the presented AAF enables power savings of 14mW, or 34% of the total 41mW TX power. The AAF has been fabricated as part of a single-chip 0.13μm CMOS transceiver.
Sandeep D'Souza, Mau-Chung Frank Chang, Sudhakar Pamarti, Bipul Agarwal, Hossein Zarei, Tirdad Sowlati, Roc Berenguer
ISCAS7
2010 Configurable MCPW based inductor for mm-wave circuits and systems
abstract
High quality factor configurable inductors are critical components for robust multiband wireless applications. Configurable Multilayer Coplanar Wave Guide (MCPW) based inductors in nano-scale CMOS technologies are proposed in this paper for millimeter wave frequency applications. Inductors are tweaked by adjusting the transmission line length to compensate for process variations of the mm-wave circuits and cover multiple bands. For demonstration, a mm-wave Voltage Controlled Oscillator (VCO) using the configurable inductor was designed and fabricated. Measurement reveals that the VCO covers frequency ranging from 72.8 to 77.6 GHz with phase noise of -109 dBc/Hz at 10 MHz offset, which is in good agreement with the MCPW-based inductor model prediction.
Gui Liu, Roc Berenguer, Abe Akhiyat, Keya Kamtikar, Yang Xu 0017
ISCAS2
2010 Design for test of a low power multi-standard GPS/GALILEO RF front-end
abstract
This contribution deals with the complete design of a multi-standard GPS/GALILEO front-end, from setting the specifications through to the complete characterization of the device. Special focus will be given to the design for test and the characterization of the design, as optimizing the time spent on this improves time-to-market for the product under development. The highly integrated, low power GPS/GALILEO front-end is designed with a low-IF architecture. The front-end exhibits a voltage gain of 103dB with a power consumption of 66mW from a 3V voltage supply and 38mW if the internal dual-gain LNA is switched OFF. The SSB noise figure of 3.7dB which makes it suitable for high sensitivity applications. Te implemented architecture allows 3 different configurations, adding flexibility to its future applications.
Jaizki Mendizabal, Unai Alvarado, Iñigo Adin, Guillermo Bistué, Juan Meléndez, Roc Berenguer
ISCAS6
2009 A dual front-end for the new GPS/GALILEO generation in a 0.35 µm SiGe process
Jaizki Mendizabal, Unai Alvarado, I. Guruceaga, Héctor Solar, Andrés Garcia-Alonso, Roc Berenguer
Integr.6
2009 A fully integrated 23.2dBm P1dB CMOS power amplifier for the IEEE 802.11a with 29% PAE
Héctor Solar, Roc Berenguer, Joaquín de No, Iñaki Gurutzeaga, Unai Alvarado, Jon Legarda
Integr.2
2008 Ultra-Low Power Passive UHF RFID for Wireless Sensor Networks
abstract
This paper presents two ultra-low-power voltage sensors and a voltage protection, to optimize the charge of the supply capacitor in passive UHF RFID sensors. The state-of-the-art in the field is analyzed and compared with the proposed circuits using a 0.35 mum 2P4M CMOS process. The measured current consumption of the voltage sensors are 70 nA and 0.2 nA at 3.3 V. The voltage protection circuit consumes less than 60 nA at 3 V. Additionally, a low power consumption voltage regulator is presented. Experimental results prove its proper operation.
R. Morales-Ramos, Alexander Vaz, Daniel Pardo 0001, Roc Berenguer
DSD4
2008 A low-power RF front-end for 2.5 GHz receivers
abstract
This paper presents a low power and low cost front end for a direct conversion 2.5 GHz ISM band receiver composed of a 16 kV HBM ESD protected LNA, differential Gilbert-cell mixers, and high-pass filters for DC offset cancellation. The whole front-end is implemented in a 2P6M 0.18 μm RFCMOS process. It exhibits a voltage gain of 24dB and a SSB noise figure of 8.4dB which make it suitable for most of the 2.5 GHz wireless short-range communication transceivers. The achieved power consumption is only 1.06mW from a 1.2V power supply.
Laura Moreno, Didac Gómez, José Luis González 0001, Diego Mateo, Xavier Aragonès, Roc Berenguer, Héctor Solar
ISCAS6
2006 Voltage Sensors for Supply Capacitor in Passive UHF RFID Transponders
abstract
This paper presents two very low-power consumption voltage-sensor circuits for the supply capacitor in passive UHF RFID transponders. The proposed circuits are key points in a battery-life-free RFID tag, by sensing the charge stored in a supply capacitor, and enabling the rest of the system when enough charge is available. In comparison to previous published circuits, the average current of our circuits is one order of magnitude lower. The average current consumption for our solutions is below 100 nA, for a supply voltage between 2.5 V and 3.3 V. In addition, we have proposed some modifications to the best published results; and diminished the power consumption one order of magnitude.
R. Morales-Ramos, Juan A. Montiel-Nelson, Roc Berenguer, Andrés Garcia-Alonso
DSD3
2006 Adjustable Voltage Sensors for Power Supply Chains in Passive UHF RFID Transponders
abstract
In passive UHF RFID transponders, a storage capacitor is used to supply the tag's subsystems. A quick charge of the storage capacitor and a sufficient supply voltage for the subsystems are intended for proper operation, thus using a voltage sensor. This paper presents two adjustable very low power consumption voltage sensor circuits for the supply capacitor in passive UHF RFID transponders. The proposed circuits sense the charge stored in a supply capacitor and enable the rest of the system when enough charge is available. In comparison to previous published circuits, the average current of our circuits is one order of magnitude lower. The average current consumption for our two solutions is below 100 nA, for a supply voltage between 2.5 V and 3.3 V
R. Morales-Ramos, Juan A. Montiel-Nelson, H. Milosiu, Roc Berenguer, Andrés Garcia-Alonso
ETFA4