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EDBT 2026 Demo / reviewers in the wild / expert

J. E. Oristian

dblp:63/2119 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 1987
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 100%

Topics — the 3 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
analog and mixed-signal circuits		 0.011987
Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1987
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOS capacitance model		 0.011987
Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1987
Integrated circuit design › semiconductor devices
short-channel effects		 0.011987
Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1987

Methods — techniques the papers use, named apart from their topics

two-dimensional device simulation · 0.0capacitance extraction · 0.0
YearPublicationVenuePosition
1987 Analysis of Velocity Saturation and Other Effects on Short-Channel MOS Transistor Capacitances
abstract
In order to analyze short-channel effects of MOS transistor ac characteristics, a two-dimensional device simulator has been used to extract MOS transistor capacitances. The results of simulation and measurements agree well. The causes of short-channel effects have been understood and explained by the simulations. Two-dimensional effects and velocity saturation are the main causes of short-channel effects in MOS transistor capacitances. Two-dimensional simulation was found to be a useful tool for studying mobility models, as well as for obtaining capacitance models for circuit simulation.
Hiroshi Iwai, Mark R. Pinto, Conor S. Rafferty, J. E. Oristian, Robert W. Dutton
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.4