As emerging computing paradigms push beyond the limitations of traditional CMOS-based computing using Von Neumann architectures, there is a growing need to rethink and extend Electronic Design Automation (EDA) methodologies to support their unique characteristics. These paradigms—including Approximate Computing, In-Memory Computing, Reconfigurable Field-Effect Transistors (RFETs), and Photonic Computing—represent diverse and promising directions beyond conventional digital design. Collectively, they offer transformative potential for achieving significant improvements in energy efficiency, computational speed, and architectural scalability. For example, application-specific approximate computing enables the design of custom arithmetic circuits that exploit application-level error resilience, allowing for optimized accuracy–power–performance–area (PPA) trade-offs in error-tolerant applications. Similarly, processing-in-non-volatile memories, such as those based on Ferroelectric Field-effect Transistors (FeFETs), enhances energy efficiency by enabling analog computation—particularly for operations like matrix multiplication—directly within the memory arrays. The intrinsic polymorphism of RFETs supports compact, multifunctional logic gates and introduces new opportunities for circuit-level obfuscation and security-aware design. Likewise, photonic analog wavefront computing offers substantial gains in latency and energy efficiency by encoding and processing information in the analog optical domain, leveraging phenomena such as diffraction and interference to perform computation at the speed of light. However, they also introduce a host of new challenges in circuit and architecture design, such as vast and irregular design spaces, analog and non-Boolean behavior, and new device-level constraints that existing EDA tools are not capable of handling. To this end, the current article focuses on the development of efficient and robust EDA frameworks that can enable the practical realization of circuits and architectures in these emerging domains.

Conventional neural network-based machine learning algorithms often encounter difficulties in data-limited scenarios or where interpretability is critical. Conversely, Bayesian inference-based models excel with reliable uncertainty estimates and explainable predictions. Recently, many in-memory computing (IMC) architectures achieve exceptional computing capacity and efficiency for neural network tasks leveraging emerging nonvolatile memory (NVM) technologies. However, their application in Bayesian inference remains limited because the operations in Bayesian inference differ substantially from those in neural networks. In this article, we introduce a compact in-memory Bayesian inference engine with high efficiency and performance utilizing a multi-bit ferroelectric field-effect transistor (FeFET). This design encodes a Bayesian model within a compact FeFETbased crossbar by mapping quantized probabilities to discrete FeFET states. Consequently, the crossbar’s outputs naturally represent the output posteriors of the Bayesian model. Our design facilitates efficient Bayesian inference, accommodating various input types and probability precisions, without additional calculation circuitry. As the first FeFET-based in-memory Bayesian inference engine, our design demonstrates a notable storage density of 26.32 Mb/mm2and a computing efficiency of 581.40 TOPS/W in a representative Bayesian classification task, indicating a 10.7×/43.4× compactness/efficiency improvement compared to the state-of-the-art alternative. Utilizing the proposed Bayesian inference engine, we develop a feature selection system that efficiently addresses a representative NP-hard optimization problem, showcasing our design’s capability and potential to enhance various Bayesian inference-based applications. Test results suggest that our design identifies the essential features, enhancing the model’s performance while reducing its complexity, surpassing the latest implementation in operation speed and algorithm efficiency by 2.9×/2.0×, respectively.

In scenarios with limited training data or where explainability is crucial, conventional neural network-based machine learning models often face challenges. In contrast, Bayesian inference-based algorithms excel in providing interpretable predictions and reliable uncertainty estimation in these scenarios. While many state-of-the-art in-memory computing (IMC) architectures leverage emerging non-volatile memory (NVM) technologies to offer unparalleled computing capacity and energy efficiency for neural network workloads, their application in Bayesian inference is limited. This is because the core operations in Bayesian inference, i.e., cumulative multiplications of prior and likelihood probabilities, differ significantly from the multiplication-accumulation (MAC) operations common in neural networks, rendering them generally unsuitable for direct implementation in most existing IMC designs. In this paper, we propose FeBiM, an efficient and compact Bayesian inference engine powered by multi-bit ferroelectric field-effect transistor (FeFET)-based IMC. FeBiM effectively encodes the trained probabilities of a Bayesian inference model within a compact FeFET-based crossbar. It maps quantized logarithmic probabilities to discrete FeFET states. As a result, the accumulated outputs of the crossbar naturally represent the posterior probabilities, i.e., the Bayesian inference model's output given a set of observations. This approach enables efficient in-memory Bayesian inference without the need for additional calculation circuitry. As the first FeFET-based in-memory Bayesian inference engine, FeBiM achieves an impressive storage density of 26.32 Mb/mm2 and a computing efficiency of 581.40 TOPS/W in a representative Bayesian classification task. These results demonstrate 10.7×/43.4× improvement in compactness/efficiency compared to the state-of-the-art hardware implementation of Bayesian inference.

Rapid advancements in artificial intelligence have given rise to transformative models, profoundly impacting our lives. These models demand massive volumes of data to operate effectively, exacerbating the data-transfer bottleneck inherent in the conventional von-Neumann architecture. Compute-in-memory (CIM), a novel computing paradigm, tackles these issues by seam-lessly embedding in-memory search functions, thereby obviating the need for data transfers. However, existing non-volatile memory (NVM)-based accelerators are application specific. During the similarity based associative search operation, they only support a single, specific distance metric, such as Hamming, Manhattan, or Euclidean distance in measuring the query against the stored data, calling for reconfigurable in-memory solutions adaptable to various applications. To overcome such a limitation, in this paper, we present FeReX, a reconfigurable associative memory (AM) that accommodates various distance metrics including Hamming, Manhattan, and Euclidean distances. Leveraging multi-bit ferroelectric field-effect transistors (FeFETs) as the proxy and a hardware-software co-design approach, we introduce a constrained satisfaction problem (CSP)-based method to automate AM search input voltage and stored voltage configurations for different distance based search functions. Device-circuit co-simulations first validate the effectiveness of the proposed FeReX methodology for reconfigurable search distance functions. Then, we benchmark FeReX in the context of k-nearest neighbor (KNN) and hyperdimensional computing (HDC), which highlights the robustness of FeReX and demonstrates up to 250× speedup and 104energy savings compared with GPU.

Content addressable memory (CAM) has been employed in various data-intensive tasks for its parallel pattern-matching capability. To enhance the density and efficiency of CAMs, emerging nonvolatile memory (NVM) technologies have been exploited in the CAM designs. Recently, the multilevel cell (MLC) characteristics of NVMs have been utilized in several analog and multibit CAM designs, achieving higher density than conventional binary/ternary CAM designs. However, these analog and multibit CAM designs are built with the practical experience of circuit designers, lacking a general analog/multibit design methodology. In this article, we propose a general and effective design and optimization scheme for multibit CAM, using a novel 3-D nand-compatible amorphous indium–gallium–zinc–oxide (IGZO) flash as a proxy of three-terminal NVM devices. The proposed scheme encodes the multibit data into the flash devices, enabling the 3-D nand flash array to operate as an ultradense nand or nor CAM without significant structural change. For further performance optimization, we propose a design space exploration scheme for optimal CAM parameters. Evaluation results suggest that the CAM design based on our proposed design and optimization scheme achieves over 35$\times$area per bit saving compared with the representative ferroelectric field effect transistor (FeFET)-based multibit CAM, and a 38.1$\times$energy-delay-area product (EDAP) improvement over the state-of-the-art analog CAM, respectively.

A fast and efficient search function across the database has been a core component for a number of data-intensive tasks in machine learning, IoT applications, and inference. However, the conventional digital machines implementing the search functionality with repetitive arithmetic operations suffer from the energy efficiency and performance degradation due to the significant data transfer between the storage and processing units in the Von Neumann architecture. Ternary content addressable memories (TCAMs) are an essential hardware form of computing-in-memory (CiM) designs that aim to overcome the data transfer bottlenecks by implementing the parallel associative search function within the memory blocks. While most state-of-the-art TCAM designs focus on improving the information density by harnessing compact nonvolatile memories (NVMs), little efforts have been spent on optimizing the energy efficiency of the NVM-based TCAM. In this article, by exploiting the ferroelectric FET (FeFET) as a representative NVM, we propose an NOR-type 2FeFET-1T and an NAND-type 2FeFET-2T TCAM designs that enable highly energy-efficient associative search by reducing the associated precharge overheads. We then propose a hybrid ferroelectric NAND-NOR (HFNN) TCAM design to further improve the energy efficiency. An HFNN-based segmented architecture is proposed to reduce the search delay and energy by search operation pipeline. Evaluation results suggest that the proposed 2FeFET-1T, 2FeFET-2T and HFNN TCAM design consume$3.03\times $,$8.08\times $, and$226.92\times $less search energy than the conventional 16T complementary metal oxide semiconductor (CMOS) TCAM, respectively. Application benchmarking shows that our proposed 2FeFET-1T/2FeFET-2T/HFNN TCAM can save, on average, 45.2%/50.6%/57.5% the GPU energy consumption as compared to the conventional GPU.

Ternary content addressable memories (TCAMs) are a special form of computing-in-memory (CiM) circuits that aim to address the so-called memory wall issues by merging the parallel search function with memory blocks. Due to the content addressing nature, TCAMs have been widely utilized for search intensive tasks in low-power, data analytic applications, such as IP routers, associative memories, and learning models. While most state-of-the-art TCAM designs focus on improving the TCAM density by harnessing compact nonvolatile memories (NVMs), little efforts have been spent on reducing and optimizing the energy consumption of the NVM based TCAM. In this paper, by exploiting the Ferroelectric FET (FeFET) as a representative NVM, we propose two compact and energy-aware designs of ferroelectric TCAMs for low power applications. We first introduce a novel 2FeFET based XOR-like gate structure that can also be adopted to other NVMs, and then leverage the structure to propose two TCAM designs that achieve high energy efficiency by either reducing the associated precharge overhead (2FeFET-1T cell), or eliminating the precharge phase typically required by TCAMs (2FeFET-2T cell). We evaluate and compare the designs w.r.t area, search energy and delay at array level with other existing designs, and benchmark the proposed TCAM designs in an associative memory based GPU architecture. The results suggest that the proposed 2FeFET-1T/2FeFET-2T TCAM design consumes 3.03X/8.08X less search energy than the conventional 16T CMOS TCAM, while the proposed design cell area is only 32.1%/39.3% of the latter. Compared with the state-of-the-art 2FeFET only TCAM array, our proposed designs still achieve 1.79X and 4.79X search energy reduction, respectively. Moreover, our proposed designs can achieve, on average, 45.2%/51.5% energy saving compared with the conventional GPU based architecture at the application level.

With the rapid development of emerging technologies, especially the ferroelectric field-effect transistors (FeFETs), the density and energy efficiency of ternary content addressable memory (TCAM) have been increasingly improved. TCAM plays a major role in realizing In-Memory Computing and other brain-inspired computing concepts. Recently, the parallel search functionality of a FeFET based ultra-dense TCAM design is also enhanced with a Hamming distance-based approximate search scheme. However, in order to realize the highly-promising TCAM design, in which the approximate search function based on Hamming distance is implemented, it is inevitable to investigate the impact of temperature on the reliability of FeFET-based TCAM cells as well as all involved peripheral circuits. In this paper, the temperature impact on the FeFET at the device level and the approximate TCAM design at the circuit level is investigated for the first time. The demonstrated example of a FeFET-based TCAM array shows that the unique temperature dependency of a FeFET device can help mitigate the temperature impact on the FeFET TCAM array. Based on the observation, we showcase, evaluate, and discuss in detail one strategy to eliminate the temperature impact on the approximate TCAM design. Understanding and mitigating the deleterious impact of temperature on the reliability of FeFET-based TCAM circuits is essential to ensure reliable In-Memory Computing.