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Kaori Moriyama

dblp:66/2264 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 1991
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Electronic design automation · 69% High-performance computing · 21% Integrated circuit design · 10%

Topics — the 5 heaviest of 5, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Electronic design automation › technology computer-aided design
device simulation		 0.011991
SMART-II: a three-dimensional CAD model for submicrometer MOSFET's · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1991
Electronic design automation › technology computer-aided design › device simulation
MOSFET simulation		 0.011991
SMART-II: a three-dimensional CAD model for submicrometer MOSFET's · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1991
High-performance computing
scientific computing systems		 0.011991
SMART-II: a three-dimensional CAD model for submicrometer MOSFET's · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1991
Integrated circuit design
semiconductor device modeling		 0.011991
SMART-II: a three-dimensional CAD model for submicrometer MOSFET's · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1991
High-performance computing › scientific computing systems
supercomputer simulation		 0.011991
SMART-II: a three-dimensional CAD model for submicrometer MOSFET's · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1991
YearPublicationVenuePosition
1991 SMART-II: a three-dimensional CAD model for submicrometer MOSFET's
abstract
The authors describe a three-dimensional CAD model for submicrometer MOSFETs. The model has been implemented in a three-dimensional process/device integrated simulator, SMART-II, using a supercomputer. The MOS device model for hot electron transport is based on a modified current relation including an electron temperature effect in an inhomogeneous field. The need for an improved mobility model in an inversion layer and an impact ionization model using the recent experimental data for the mean free path is discussed with emphasis on the numerical simulation for I/V characteristics of small-geometry MOSFETs from the threshold regime to the avalanche regime. It is found that this approach is effective in realizing a three-dimensional CAD model for 0.5- mu m MOSFETs. An application of the model reveals a three-dimensional effect of avalanche breakdown behavior in small-geometry MOSFETs.>
Shinji Odanaka, Akira Hiroki, Kikuyo Ohe, Kaori Moriyama, Hiroyuki Umimoto
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.4