Demonstration venue · read-only. Every page can be browsed; the buttons that would change it are switched off. Create an account to run TaxoReview on your own data. A simulation from public publication records: the people listed were not invited and did not agree to review.
? Tutorial for this page

Choungki Song

dblp:68/11180 · DBLP profile ↗
← Back
5ranked-venue papers
0as first author
1since 2021 · last 2025
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 5 · 1 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
4 papers
Memory systems · 62% Hardware accelerators and domain-specific architectures · 25% Energy-efficient computing · 8%
Artificial intelligence
2 papers
Language models and text generation · 87% Deep learning architectures and training · 13%

Topics — the 12 heaviest of 13, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Memory systems
processing-in-memory
1.322025
Near-Memory LLM Inference Processor based on 3D DRAM-to-logic Hybrid Bonding · DAC 2025
Newton: A DRAM-maker's Accelerator-in-Memory (AiM) Architecture for Machine Learning · MICRO 2020
Natural language and speech › Language models and text generation
large language model inference
0.912025
Near-Memory LLM Inference Processor based on 3D DRAM-to-logic Hybrid Bonding · DAC 2025
Memory systems › processing-in-memory › memory-centric computing
near-memory accelerator
0.912025
Near-Memory LLM Inference Processor based on 3D DRAM-to-logic Hybrid Bonding · DAC 2025
Hardware accelerators and domain-specific architectures › machine learning accelerator
neural network accelerator
0.912025
Near-Memory LLM Inference Processor based on 3D DRAM-to-logic Hybrid Bonding · DAC 2025
Hardware accelerators and domain-specific architectures
machine learning accelerator
0.412020
Newton: A DRAM-maker's Accelerator-in-Memory (AiM) Architecture for Machine Learning · MICRO 2020
Memory systems
memory architecture
0.412019
LL-PCM: Low-Latency Phase Change Memory Architecture · DAC 2019
Memory systems
non-volatile memory
0.412019
LL-PCM: Low-Latency Phase Change Memory Architecture · DAC 2019
Memory systems › non-volatile memory
phase change memory
0.412019
LL-PCM: Low-Latency Phase Change Memory Architecture · DAC 2019
Processor architecture and microarchitecture › pipelining
pipeline design
0.212016
ScalCore: Designing a core for voltage scalability · HPCA 2016
Energy-efficient computing
voltage scaling
0.212016
ScalCore: Designing a core for voltage scalability · HPCA 2016
Energy-efficient computing
memory energy efficiency
0.112019
LL-PCM: Low-Latency Phase Change Memory Architecture · DAC 2019
Energy-efficient computing › power management
dynamic voltage and frequency scaling
0.112016
ScalCore: Designing a core for voltage scalability · HPCA 2016

Methods — techniques the papers use, named apart from their topics

dual-IO scheme · 1.7centralized controller · 1.73d hybrid bonding · 1.7multiply-accumulate units · 0.9interleaved matrix layout · 0.9command ganging · 0.9simulation · 0.2
YearPublicationVenuePosition
2025 Near-Memory LLM Inference Processor based on 3D DRAM-to-logic Hybrid Bonding
abstract
Large language model (LLM) inference poses dual challenges, demanding substantial memory bandwidth and computing resources. Recent advancements in near-memory accelerators leveraging 3D DRAM-to-logic hybrid-bonding (HB) interconnects have gained attention due to their highly parallel data transfer capabilities. We address limitations in previous HB-DRAM accelerators, such as those stemming from distributed controller designs, by introducing an architecture with a centralized controller and dual-IO scheme. This approach not only reduces the chip area overhead but also enables reconfigurable GEMV/GEMM operations, boosting the performance. Simulations for the OPT 66B model show that our proposed accelerator achieves 2.9X, 3.5X, and 2.5X higher performance compared to NPU, DRAM-PIM, and heterogeneous designs (DRAM-PIM + NPU), respectively.
Sanghyeok Han, Byungkuk Yoon, Gyeonghwan Park, Choungki Song, Dongkyun Kim, Jae-Joon Kim
DAC4
2020 Newton: A DRAM-maker's Accelerator-in-Memory (AiM) Architecture for Machine Learning
abstract
Advances in machine learning (ML) have ignited hardware innovations for efficient execution of the ML models many of which are memory-bound (e.g., long short-term memories, multi-level perceptrons, and recurrent neural networks). Specifically, inference using these ML models with small batches, as would be the case at the Cloud edge, has little reuse of the large filters and is deeply memory-bound. Simultaneously, processing-in or -near memory (PIM or PNM) is promising unprecedented high-bandwidth connection between compute and memory. Fortunately, the memory-bound ML models are a good fit for PIM. We focus on digital PIM which provides higher bandwidth than PNM and does not incur the reliability issues of analog PIM. Previous PIM and PNM approaches advocate full processor cores which do not conform to PIM's severe area and power constraints. We describe Newton, a major DRAM maker's upcoming accelerator-in-memory (AiM) product for machine learning, which makes the following contributions: (1) To satisfy PIM's area constraints, Newton (a) places a minimal compute of only multiply-accumulate units and buffers in the DRAM which avoids the full-core area and power overheads of previous work and thus makes PIM feasible for the first time, and (b) employs a DRAM-like interface for the host to issue commands to the PIM compute. The PIM compute is rate-matched to the internal DRAM bandwidth and employs a non-intuitive, global input vector buffer shared by the entire channel to capture input reuse while amortizing buffer area cost. To the host, Newton's interface is indistinguishable from regular DRAM without any offloading overheads and PIM/non-PIM mode switching, and with the same deterministic latencies even for floating-point commands. (2) To prevent the PIM-host interface from becoming a bottleneck, we include three optimizations: commands which gang multiple compute operations both within a bank and across banks; complex, multi-step compute commands - both of which save critical command bandwidth; and targeted reduction of tFAWoverhead. (3) To capture output vector reuse with reasonable buffering, Newton employs an unusually-wide interleaved layout for the matrix. Our simulations running state-of-the-art neural networks show that building on a realistic HBM2E-like DRAM, Newton achieves 10x and 54x average speedup over a non-PIM system with infinite compute that perfectly uses the external DRAM bandwidth and a realistic GPU, respectively.
Mingxuan He, Choungki Song, Ilkon Kim, Chunseok Jeong, Seho Kim, Il Park 0001, Mithuna Thottethodi, T. N. Vijaykumar
MICRO2
2019 LL-PCM: Low-Latency Phase Change Memory Architecture
abstract
PCM is a promising non-volatile memory technology, as it can offer a unique trade-off between density and latency compared with DRAM and flash memory. Albeit PCM is much faster than flash memory, it is still notably slower than DRAM, which can significantly degrade system performance. In this paper, we analyze a PCM implementation in depth, and identify the primary cause of PCM's long latency, i.e., a long interconnect (high resistance/capacitance) path between a cell and a sense-amp/write-driver. This in turn requires (1) a very large charge pump consuming: ~20% of PCM chip space, ~50% of latency of write operations, and ~2× more power than a write operation itself; and (2) a large current sense-amp with long time to pre-charge the interconnect path. Then, we propose Low-Latency PCM (LL-PCM) architecture. Our analysis shows that LL-PCM can give 119% higher performance and consume 43% lower memory energy than PCM for memory-intensive applications. LL-PCM is only ~1% larger than PCM, as the cost of reducing the resistance/capacitance of the interconnect path is negated by its 4.1× smaller charge pump.
Nam Sung Kim, Choungki Song, Woo Young Cho, Jian Huang 0006, Myoungsoo Jung
DAC2
2018 In-DRAM near-data approximate acceleration for GPUs
abstract
GPUs are bottlenecked by the off-chip communication bandwidth and its energy cost; hence near-data acceleration is particularly attractive for GPUs. Integrating the accelerators within DRAM can mitigate these bottlenecks and additionally expose them to the higher internal bandwidth of DRAM. However, such an integration is challenging, as it requires low-overhead accelerators while supporting a diverse set of applications. To enable the integration, this work leverages the approximability of GPU applications and utilizes the neural transformation, which converts diverse regions of code mainly to Multiply-Accumulate (MAC). Furthermore, to preserve the SIMT execution model of GPUs, we also propose a novel approximate MAC unit with a significantly smaller area overhead. As such, this work introduces AxRam---a novel DRAM architecture---that integrates several approximate MAC units. AxRam offers this integration without increasing the memory column pitch or modifying the internal architecture of the DRAM banks. Our results with 10 GPGPU benchmarks show that, on average, AxRam provides 2.6× speedup and 13.3× energy reduction over a baseline GPU with no acceleration. These benefits are achieved while reducing the overall DRAM system power by 26% with an area cost of merely 2.1%.
Amir Yazdanbakhsh, Choungki Song, Jacob Sacks, Pejman Lotfi-Kamran, Hadi Esmaeilzadeh, Nam Sung Kim
PACT2
2016 ScalCore: Designing a core for voltage scalability
abstract
Upcoming multicores need to provide increasingly stringent energy-efficient execution modes. Currently, energy efficiency is attained by lowering the voltage (Vdd) through DVFS. However, the effectiveness of DVFS is limited: designing cores for low Vddresults in energy inefficiency at nominal Vdd. Our goal is to design a core for Voltage Scalability, i.e., one that can work in high-performance mode (HPMode) at nominal Vdd, and in a very energy-efficient mode (EEMode) at low Vdd. We call this core ScalCore. To operate energy-efficiently in EEMode, ScalCore introduces two ideas. First, since logic and storage structures scale differently with Vdd, ScalCore applies two low Vdds to the pipeline: one to the logic stages (Vlogic) and a higher one to storage-intensive stages. Secondly, ScalCore further increases the low Vddof the storage-intensive stages (Vop), so that they are substantially faster than the logic ones. Then, it exploits the speed differential by either fusing storage-intensive pipeline stages or increasing the size of storage structures in the pipeline. Our simulations of 16 cores show that a design with ScalCores in EEMode is much more energy-efficient than one with conventional cores and aggressive DVFS: for approximately the same power, ScalCores reduce the average execution time of programs by 31%, the energy (E) consumed by 48%, and the ED product by 60%. In addition, dynamically switching between EEMode and HPMode based on program phases is very effective: it reduces the average execution time and ED product by a further 28% and 15%, respectively.
Bhargava Gopireddy, Choungki Song, Josep Torrellas, Nam Sung Kim, Aditya Agrawal, Asit K. Mishra
HPCA2