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Liyang Pan

dblp:68/9240 · DBLP profile ↗
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11ranked-venue papers
0as first author
1since 2021 · last 2023
0009-0008-9126-5640ORCID · corroborated

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 8 · 1 since 2021Applied, interdisciplinary, general and emerging computing · 3

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
4 papers
Storage systems · 48% Memory systems · 24% Energy-efficient computing · 10%

Topics — the 13 heaviest of 13, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Memory systems
non-volatile memory
0.532016
A 1G-cell floating-gate NOR flash memory in 65 nm technology with 100 ns random access time · Sci. China Inf. Sci. 2015
Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology · Sci. China Inf. Sci. 2014
LSB page refresh based retention error recovery scheme for MLC NAND Flash · Sci. China Inf. Sci. 2016
Storage systems
flash and SSD
0.212016
LSB page refresh based retention error recovery scheme for MLC NAND Flash · Sci. China Inf. Sci. 2016
Storage systems › flash and SSD › flash memory
NAND flash
0.212016
LSB page refresh based retention error recovery scheme for MLC NAND Flash · Sci. China Inf. Sci. 2016
Storage systems › flash and SSD
flash memory
0.212014
Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology · Sci. China Inf. Sci. 2014
Storage systems › flash and SSD › flash memory
NOR flash
0.212014
Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology · Sci. China Inf. Sci. 2014
Energy-efficient computing › low-power design
dual-vdd assignment
0.112011
A chip-level path-delay-distribution based Dual-VDD method for low power FPGA (abstract only) · FPGA 2011
Electronic design automation › design automation tools › FPGA CAD
FPGA design tools
0.112011
A chip-level path-delay-distribution based Dual-VDD method for low power FPGA (abstract only) · FPGA 2011
Reconfigurable computing and FPGAs
FPGA power reduction
0.112011
A chip-level path-delay-distribution based Dual-VDD method for low power FPGA (abstract only) · FPGA 2011
Storage systems › flash and SSD › flash memory
multi-level cell flash
0.112016
LSB page refresh based retention error recovery scheme for MLC NAND Flash · Sci. China Inf. Sci. 2016
Integrated circuit design
memory circuit design
0.112015
A 1G-cell floating-gate NOR flash memory in 65 nm technology with 100 ns random access time · Sci. China Inf. Sci. 2015
Hardware reliability and fault tolerance
radiation effects
0.112014
Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology · Sci. China Inf. Sci. 2014
Energy-efficient computing
dynamic power reduction
0.012011
A chip-level path-delay-distribution based Dual-VDD method for low power FPGA (abstract only) · FPGA 2011
Energy-efficient computing
power gating
0.012011
A chip-level path-delay-distribution based Dual-VDD method for low power FPGA (abstract only) · FPGA 2011

Methods — techniques the papers use, named apart from their topics

LSB page refresh · 0.2SONOS technology · 0.2tree-based VDD assignment · 0.1path-delay-distribution analysis · 0.1
YearPublicationVenuePosition
2023 An Error-Free 64KB ReRAM-Based nvSRAM Integrated to a Microcontroller Unit Supporting Real-Time Program Storage and Restoration
abstract
Nonvolatile SRAM (nvSRAM), which integrates the nonvolatile elements with SRAM using a direct bit-to-bit connection has raised much attention in the past few years, owing to its fast parallel data transfer and fast power-on/off speed. However, few nvSRAM macros have been silicon verified to be enacted through the power-failure event. On the other hand, the capacity of fabricated nvSRAM macro is small (~ Kbit) to date, inhibiting its practical application. This study presents a novel ReRAM-based nvSRAM bitcell with improved reliability and scalability. A 64KB nvSRAM macro was designed and integrated into a 32-bit microcontroller unit (MCU). The chip was fabricated using HfOx-based BEOL ReRAM and a 130nm CMOS technology. To pursue fast storage, a write-without-verify scheme is adopted to program ReRAM, measurement results show that the raw bit error rate between the power outages is < 0.1% for the full macro under such constraint. Cryptography and machine learning applications are successfully performed on the MCU system. For the first time, with the help of correction techniques, we achieved an error-free nvSRAM macro that is reliable enough to store/restore programs and demonstrated a real-time robotic control system empowered by the nvSRAM. The proposed nvSRAM macro has the largest capacity to date.
Hanwen Gong, Hu He 0001, Liyang Pan, Bin Gao 0006, Jianshi Tang, Sining Pan, Dabin Wu, He Qian, Huaqiang Wu
IEEE Trans. Circuits Syst. I Regul. Pap.3
2019 OCStore: Accelerating Distributed Object Storage with Open-Channel SSDs
abstract
SSDs are getting widely used in data centers. It is a critical issue to design efficient software for exploiting the benefits of fast SSD hardware. In this paper, we propose OCStore, an object store based on open-channel SSDs for distributed object storage system. OCStore manages the objects directly on raw flash memory, mitigating redundant functions across the object store, the file system, and the FTL layers. It provides streamed transactional update, which not only ensures the multi-page atomicity leveraging the non-overwrite flash write features, but also provides isolation for independent I/O streams while enabling parallel accesses to different channels. OCStore also coordinates different channels to enable transaction-aware scheduling, so as to reduce transaction-level latency and provide low response time to distributed storage. We implement OCStore in Linux kernel on the real open-channel SSDs, and evaluate them as OSDs in Ceph. Evaluations show that OCStore outperforms state-of-the-art object stores by 1.5× to 3.0×, while providing much lower and stable latencies, and decreases up to 70% write traffic under heavy workloads.
Youyou Lu, Zhe Yang 0012, Liyang Pan, Jiwu Shu
ICDCS4
2016 LSB page refresh based retention error recovery scheme for MLC NAND Flash
Haozhi Ma, Liyang Pan
Sci. China Inf. Sci.3
2015 A 1G-cell floating-gate NOR flash memory in 65 nm technology with 100 ns random access time
Zongliang Huo, Ming Liu 0022, Liyang Pan
Sci. China Inf. Sci.6
2014 An ultra-low-power extended counting ADC For large scale sensor arrays
abstract
In this paper, an ultra-low-power area-efficient 12-bit extended counting analog-to-digital conversion (EC-ADC) is presented. A double-sampling configuration for incremental ΣΔ modulators is proposed to halve the clock frequency of EC-ADC for the same conversion accuracy and rate. A class-AB operational transconductance amplifier (OTA) for low power EC-ADC is developed. The proposed architecture has been implemented using a commercial 0.18μm CMOS technology and occupies an area of 0.036mm2. Measured results show that a power consumption of 13μW can be achieved at the conversion rate of 50Ksamples/s and 10.2-bit accuracy respectively.
Cencen Gao, Liyang Pan
ISCAS5
2014 Total ionizing radiation effects of 2-T SONOS for 130 nm/4 Mb NOR flash memory technology
Fengying Qiao, Liyang Pan, Haozhi Ma
Sci. China Inf. Sci.2
2014 A Fast Application-Based Supply Voltage Optimization Method for Dual Voltage FPGA
abstract
Dual supply voltage was a mature method to reduce the dynamic power of specific and programmable circuits, and the unsettled low voltage level (VL) was proved to have impact on its effect. In this paper, a circuit-level power model is developed to estimate the optimal VLfast for field-programmable gate array (FPGA). The model is mainly based on the path delay distribution of applications and the delay function of the integrated circuit technology. It can also count minor factors, such as path overlap, transition density, and capacitance. Experiment was conducted on a 90-nm FPGA model using MCNC benchmark. The results showed that the proposed method could generate near optimum VLfor most benchmarks. The best power reduction ratio is only 5.6% less than the gate-level heuristic method, which is relatively precise, but our method is ~100-10000 times faster. It implies that the dual voltage design with variable VL is a possible and promising low power method for field-programmable devices.
Jianfeng Zhu 0001, Liyang Pan, Yaru Yan, Hu He 0001
IEEE Trans. Very Large Scale Integr. Syst.2
2011 A chip-level path-delay-distribution based Dual-VDD method for low power FPGA (abstract only)
abstract
Dual-VDD FPGA architecture has been proposed to reduce the FPGA's power consumption, where a low VDD (VDDL) is assigned to non-critical resources and unused resources are power-gated. In this paper, a path-delay-distribution (PDD) based design method of supply voltage in dual-VDD FPGA is developed, which gives an estimated optimal VDD solution for the required applications. Meanwhile, an improved tree-based VDD assignment algorithm is accordingly designed. Thus chip-level optimization of dual-VDD FPGA is achieved on the chosen granularity with the power consumption minimized. Based on MCNC benchmark circuits at 90nm technology node, our experimental result shows that: the power reduction rate depends on VDDL level; the design method proposed in this work gives the optimal one automatically. This design method could be utilized to guide the FPGA automatic design, saving the time to search for the system's optimal supply voltage, and the proposed assignment algorithm is more efficient in dynamic power reduction.
Jianfeng Zhu 0001, Yaru Yan, Hu He 0001, Liyang Pan
FPGA6
2011 A cost-efficient self-configurable BIST technique for testing multiplexer-based FPGA interconnect
Jianfeng Zhu 0001, Hu He 0001, Liyang Pan
J. Electron. Test.4
2011 Erratum to: A Cost-Efficient Self-Configurable BIST Technique for Testing Multiplexer-Based FPGA Interconnect
Jianfeng Zhu 0001, Hu He 0001, Liyang Pan
J. Electron. Test.4
2010 A novel high-speed and low-power negative voltage level shifter for low voltage applications
abstract
A novel high-speed and low-power negative level shifter suitable for low voltage applications is presented. To reduce the switching delay and leakage current, a novel bootstrapping technique is designed for the level shifter. Furthermore, a pull-down driver is proposed to have high driving capability under different operation modes. The circuit has been designed in 130 nm 1.5 V/5 V triple-well CMOS technology with a nominal power supply VDDof 1.5 V and a negative voltage of -4.5 V. Simulation results show that the switching delay and power consumption have been significantly reduced by roughly 62% and 65%, respectively. In addition, the proposed level shifter realizes a wide operation margin with a lower VDDcompared to conventional implementations.
Peijun Liu, Xueqiang Wang, Liyang Pan
ISCAS5