In order to achieve ultra-low power (ULP), ICs are being designed for VDD≤ 0.5 V. At these low voltages, random dopant fluctuations (RDFs) result in a stochastic component of logic delay that can be comparable to the global corner delay. Moreover, the probability density function (PDF) of this stochastic delay can be highly non-Gaussian. In order to predict the statistical impact of RDF-induced local variations on logic timing, it is necessary to incorporate these effects into a timing closure methodology. This paper presents a computationally efficient methodology for stochastic characterization of standard cell li- braries at low voltage, where the cell delay is a nonlinear function of the transistor random variables (RVs), and the resulting cell delay has a non-Gaussian PDF. It also presents a computation- ally efficient methodology for computing any point on the PDF of a timing path (TP) delay, in the case where cell delays are non-Gaussian. The method is called nonlinear operating point analysis of local variation (NLOPALV). The general NLOPALV theory is developed. It is applied to cell library characterization, and the accuracy of the NLOPALV approach is validated by comparison to Monte Carlo simulation. NLOPALV is also applied to timing path analysis on a 28 nm DSP IC. The approach has been implemented using commercial CAD tools, and integrated into a commercial IC design flow. The NLOPALV approach gives timing results that are within 5% accuracy compared to Monte Carlo analysis at VDD= 0.5 V. This compares to errors on the order of 50% when the Gaussian approximation is used.

For CMOS feature size of 65 nm and below, local (or intra-die or within-die) variations in transistor Vt contribute stochastic variation in logic delay that is a large percentage of the nominal delay. Moreover, when circuits are operated at low voltage (Vdd ¿ 0.5 V), the standard deviation of gate delay becomes comparable to nominal delay, and the Probability Density Function (PDF) of the gate delay is highly non-Gaussian. This paper presents a computationally efficient algorithm for computing the PDF of logic Timing Path (TP) delay, which results from local variations. This approach is called Non-linear Operating Point Analysis for Local Variations (NLOPALV). The approach is implemented using commercial STA tools and integrated into the standard CAD flow using custom scripts. Timing paths from a 28 nm commercial DSP are analyzed using the proposed technique and the performance is observed to be within 5% accuracy compared to SPICE based Monte-Carlo analysis.

In the last couple of decades, handheld wireless devices such as cell phones have become one of the most prolific electronic devices in history. With this has come an exploding demand for performance and features that cover almost every aspect of our digital multimedia interconnected lives including 3-D gaming, still and video cameras, WAN, Bluetooth, high-speed data connections, and so on. As ever increasing features continue to be integrated into these products, there is an ongoing need to develop innovative ways to reduce power consumption and extend battery life. Only through continual process and circuit cooptimization are we able to reap the benefits of technology scaling required to meet the feature and performance demands in the face of increasing process variations and exponentially increasing leakage currents. As a result, SmartReflex power and performance technologies have been developed and applied to 90 nm, 65 nm, and 45 nm system-on-chip (SoC), to achieve optimal power and performance. SmartReflex technologies consist of two major components to optimize SoC power and performance: static and dynamic techniques. Static techniques like power-gating, retention and off-mode are used to lower leakage and allow for extended battery lifetimes for standby times. Dynamic techniques such as dynamic power switching, adaptive voltage scaling, dynamic voltage/frequency scaling with split-rail memories, and adaptive body-biasing address active power and performance challenges. These techniques enable SoC solutions with the performance of the latest process technology and provide the user with advanced multimedia features with orders of magnitude of power reduction.

High levels of integration have complicated the entire IC manufacturing process. Crucial steps such as ramp to volume production and yield improvement techniques are being challenged. In this paper, a diagnostic system that has been developed and deployed into a production environment is presented. Experiments conducted demonstrating the value of the diagnostic tool and its limitations are presented.