The purpose of this paper is a slight modification of a series expansion method proposed elsewhere for the electrical modeling of lossy-coupled multilayer interconnection lines, that does not involve iterations and yields solutions of sufficient accuracy for most practical interconnections as used in common VLSI chips. We use a Fourier series restricted to cosine functions. The solution for the layered medium is found by matching the potential expressions in the different homogeneous layers with the help of boundary conditions. In the plane of conductors, the boundary conditions are satisfied only at a finite, discrete set of points (point matching procedure).

Non-linear MOSFET models are mostly derived indirectly from DC, low-frequency C-V and/or high-frequency S-parameter measurements. We developed non-linear modelling techniques that determine the state functions of MOSFETs directly from high-frequency vectorial large-signal measurements and thus eliminate the small-signal detour. Two methods are proposed to determine these state functions: parameter optimisation and extraction. Both approaches yield accurate results. Hence, the main difference is the application range. The method of parameter optimisation quickly generates accurate non-linear models for particular applications, while the extraction method is preferred to determine general non-linear models.