A novel sampling-biorthogonal time-domain (SBTD) technique by considering the positive sampling basis and biorthogonal dual testing functions is developed to accurately model temperature-dependent crosstalk effects in circular and square coaxial-through glass vias (C-TGVs). An equivalent transmission-line model employing EM theory-based Bessel and Neumann functions to establish closed-form formulae for the frequency- and temperature-dependent resistance, inductance, capacitance, and conductance (per-unit-height) of both C-TGV configurations is presented. The efficacy of proposed SBTD technique is verified with SPICE results and conventional finite-difference time-domain (FDTD) technique. The SBTD technique proves more efficient with respect to FDTD, exhibiting less than 0.7% average error in estimating dynamic crosstalk-induced delay with lesser computational effort. Therefore, it is very useful for addressing the issues of electromagnetic interference and electromagnetic compatibility in 3-D integration.

In this paper, a SiGe source-drain n-type hetero nanotube (HNT) junctionless field effect transistor (JLFET)is proposed with its enhanced performance for the sub-20 nm regime. We demonstrate that the hetero interface at source-channel-drain generates the valence band discontinuity in HNT JLFET which diminishes the effect of lateral band to band tunneling (L-BTBT) of electrons in OFF-state. Further, high- κ spacers improves the dynamic performance in terms of high ION/IOFF ratio of ~1011even for 5 nm gate length. The inclusion of core gate although increases the OFF-state current in nanotube junctionless field effect transistor (NT JLFET) however, in HNT JLFET OFF-state current is decreased followed by DIBL and sub-threshold slope of 4 mV /V and of 61.2 mV/decade, respectively. Moreover, implications of using the HNT JLFET in analog/RF applications has been demonstrated with numerically simulated results of Synopsys Sentaurus TCAD showing a remarkable gain-bandwidth product of 3.91 THz and an intrinsic gain of 32.77 dB.