We are currently in the middle of a second quantum revolution where the rules discovered a century ago to understand the quantum world are being applied to develop new quantum technologies [1]. Yet, most of the understanding of quantum physics is developed from the orthodox (also known as the Copenhagen) interpretation of the quantum phenomena [2], [3]. However, the orthodox theory has important difficulties in providing an intuitive view of quantum technologies because it states that a quantum object has only real properties when it is measured by an observer. This view of the reality of quantum objects is unnatural to engineers and, thus, is ignored by them when analyzing their realworld devices. What is natural to engineers is to imagine that the reality of an object (their properties) is independent of whether the object is measured or not.

A novel technique has been developed for the fabrication of Si quantum dot structures with controllable electron number through both top and side gates. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, and controlling the input and output barriers of the dot with the side gates, conductance peaks are observed which map details of the energy level within the dot as well as the interaction of the electrons with one another.

Collocation methods are very useful when one-dimensional Monte Carlo simulations of semiconductor submicron devices require a very accurate solution of Poisson's equation. Potential and electric field may be solved simultaneously with better accuracy than using finite differences. The extension to two dimensions is also outlined. We present the results obtained for Monte Carlo simulation of submicron W/Si and AuGaAs Schottky barrier diodes under forward bias conditions. The accurate solution for the electric field at the ohmic contact boundary allows us to model the injected current and to account for depletion of carriers. Tunnelling effects across the barrier are also included in the simulation.