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Richard I. Dowell

dblp:73/6437 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 1984
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Integrated circuit design · 80% Electronic design automation · 20%

Topics — the 5 heaviest of 5, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Integrated circuit design
analog and mixed-signal circuits		 0.011984
A Depletion-Mode MOSFET Model for Circuit Simulation · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1984
Electronic design automation
circuit simulation		 0.011984
A Depletion-Mode MOSFET Model for Circuit Simulation · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1984
Integrated circuit design › analog and mixed-signal circuits
device modeling		 0.011984
A Depletion-Mode MOSFET Model for Circuit Simulation · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1984
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOSFET model		 0.011984
A Depletion-Mode MOSFET Model for Circuit Simulation · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1984
Integrated circuit design › semiconductor device modeling
transistor modeling		 0.011984
A Depletion-Mode MOSFET Model for Circuit Simulation · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1984

Methods — techniques the papers use, named apart from their topics

charge-voltage relationships · 0.0charge-based capacitance model · 0.0
YearPublicationVenuePosition
1984 A Depletion-Mode MOSFET Model for Circuit Simulation
abstract
A four-terminal model is formulated for the depletion-mode MOSFET using simple charge-voltage relationships. Different regions of operation are taken into account according to the surface conditions such as accumulation, depletion, and inversion. This simple formulation is then modified to account for the second-order effects such as mobility reduction, drift-velocity saturation, and channel length modulation. Simple expressions are used to express the model parameters in terms of device dimensions. A charge-based capacitance model is used to compute transient currents. The depletion-mode model is implemented in the circuit simulation program HP-SPICE and the simulation results are discussed.
Dileep A. Divekar, Richard I. Dowell
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.2