Advanced analysis features implemented in the Vienna Integrated System for TCAD Applications simulation environment are presented. These functionalities support automatic experiment generation (design of experiments), model fitting (response surface methodology), optimization, and calibration. They interact with the core modules of the framework supporting the simulation of the manufacturing process and electrical characterization of semiconductor devices. Two examples demonstrate the efficiency of these framework capabilities. The first one shows the optimization of the electrical characteristics of vertical double-diffused metal-oxide-semiconductor (MOS) field-effect transistors. The second example deals with the optimization of analytical doping profiles of MOS transistors.