Demo Data from EDBT 2026 / reviewers in the wild / expert
Mutsuko Wakabayashi
dblp:74/2232
· DBLP profile ↗
1ranked-venue papers
0as first author
0since 2021 · last 1988
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Electronic design automation · 53% High-performance computing · 32% Integrated circuit design · 16% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Electronic design automation › technology computer-aided design
process simulation |
0.0 | 1 | 1988 | SMART-P: rigorous three-dimensional process simulator on a supercomputer · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1988 |
High-performance computing
scientific computing systems |
0.0 | 1 | 1988 | SMART-P: rigorous three-dimensional process simulator on a supercomputer · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1988 |
Integrated circuit design
semiconductor device modeling |
0.0 | 1 | 1988 | SMART-P: rigorous three-dimensional process simulator on a supercomputer · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1988 |
High-performance computing › scientific computing systems
supercomputer simulation |
0.0 | 1 | 1988 | SMART-P: rigorous three-dimensional process simulator on a supercomputer · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1988 |
Methods — techniques the papers use, named apart from their topics
generalized coordinate transformation · 0.0finite difference method · 0.0
| Year | Publication | Venue | Position |
|---|---|---|---|
| 1988 | SMART-P: rigorous three-dimensional process simulator on a supercomputerabstractA description is given of a three-dimensional process simulator, named SMART-P, that is based on the finite-difference approach to the supercomputer FACOM VP-100. To simulate the impurity redistribution and nonplanar structure in the Si/SiO/sub 2/ system, this simulator contains a three-dimensional oxidation model, an interaction model of impurities, a numerical model of interstitial-assisted oxidation-enhanced diffusion, and other process models. The numerical process modeling in the Si/SiO/sub 2/ system is described. The three-dimensional process modeling CAD (computer-aided design) has been realized by using efficient numerical algorithms based on the generalized coordinate transformation method. The capabilities of this simulator have been demonstrated in applications relating to both local oxidation of silicon (LOCOS) and trench-isolated 0.5 mu m MOSFET structures.> Shinji Odanaka, Hiroyuki Umimoto, Mutsuko Wakabayashi, Hideya Esaki |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. | 3 |