EDBT 2026 Demo / reviewers in the wild / expert
William R. Smith
dblp:74/6207
· DBLP profile ↗
3ranked-venue papers
3as first author
0since 2021 · last 2006
0000-0002-1982-2050ORCID · corroborated
Domains — the database's venue-derived domains; a paper can count in several
Applied, interdisciplinary, general and emerging computing · 2 · 2 first-authorSystems, architecture and hardware · 1 · 1 first-author
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 100% |
Topics — the 3 heaviest of 3, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
digital circuit design |
0.0 | 1 | 1962 | A New Approach to Resistor-Transistor-Tunnel-Diode Nanosecond Logic · IRE Trans. Electron. Comput. 1962 |
Integrated circuit design › digital circuit design › threshold logic
threshold logic circuits |
0.0 | 1 | 1962 | A New Approach to Resistor-Transistor-Tunnel-Diode Nanosecond Logic · IRE Trans. Electron. Comput. 1962 |
Integrated circuit design › digital circuit design › logic families
tunnel diode logic circuits |
0.0 | 1 | 1962 | A New Approach to Resistor-Transistor-Tunnel-Diode Nanosecond Logic · IRE Trans. Electron. Comput. 1962 |
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2006 | Effects of Confinement on Chemical Reaction Equilibrium in Nanoporous Materials
William R. Smith, Martin Lísal, John K. Brennan |
ICCSA (5) | 1 |
| 2004 | Molecular Simulation of Reaction and Adsorption in Nanochemical Devices: Increase of Reaction Conversion by Separation of a Product from the Reaction Mixture
William R. Smith, Martin Lísal |
ICCSA (2) | 1 |
| 1962 | A New Approach to Resistor-Transistor-Tunnel-Diode Nanosecond LogicabstractA transistor amplifier with nonlinear tunnel-diode or backward-diode feedback is described for use as a resistor-coupled threshold logic circuit or general purpose switch. The tunnel-diode feedback serves to virtually eliminate saturation and prevent cutoff thus allowing the high gain-bandwidth products of epitaxial switching transistors to be utilized at all times during switching. Switching plus delay times as low as 2 nsec have been observed with a fan in and fan out of three. Ring oscillator experiments show that delays per stage from 2 to 5 nsec are easily obtained with logical gains of two or three. The input impedance of the network is 3 to 12 ohms leading to a very practical threshold network. The particular logic decision is determined only by the bias current. Tolerance calculations are presented that indicate component requirements will not be severe. The peak current is not a critical parameter and can easily vary 100 per cent. Due to the quantizing effect of the tunnel-diode feedback, circuits with fan ins and fan outs of three would operate satisfactorily under worst case conditions with 2 per cent resistors and mild restrictions on the transistor and diode parameters. By adding backward diodes in series with the input resistors the tolerance requirements can be relaxed to 10 per cent resistors and slight restrictions on the diodes or transistor parameters. By using backward diodes the fan in and fan out can be substantially increased with little loss in speed. William R. Smith, Arthur V. Pohm |
IRE Trans. Electron. Comput. | 1 |