Content addressable memories (CAMs) are special-purpose in-memory computing units that support parallel searches directly in memory. There is growing interest in CAMs for data-intensive applications such as machine learning, data mining, and bioinformatics, which has led to a rapidly growing CAM design space. CAM cells can be implemented exclusively by CMOS or with various non-volatile memory (NVM) devices. In addition to traditional binary and ternary CAMs (BCAMs and TCAMs), analog CAM (ACAM) and multi-bit CAM (MCAM) designs have recently been introduced, which could further improve density, and also support unique in-memory distance functions. Furthermore, aside from the widely-used exact match function, CAM-based approximate match functions, such as threshold match and best match, have been proposed to further extend the utility of CAMs to new application spaces. As the CAM design space is large, evaluating different CAM design options for a given application is both crucial and challenging. This paper presents EvaCAM, a circuit-level modeling and evaluation tool for CAMs. EvaCAM supports TCAM, ACAM, and MCAM designs implemented in either CMOS or NVMs, for both exact and approximate match functions. It also allows for the exploration of different CAM designs under various optimization targets. EvaCAM has been validated against measured data from fabricated chips and detailed SPICE simulations. A comprehensive design space exploration for CAMs is provided to illustrate the impact of various design decisions and to demonstrate the use cases of EvaCAM.

Large Language Models (LLMs) deployed on edge devices, known as edge LLMs, need to continuously fine-tune their model parameters from user-generated data under limited resource constraints. However, most existing learning methods are not applicable for edge LLMs because of their reliance on high resources and low learning capacity. Prompt tuning (PT) has recently emerged as an effective fine-tuning method for edge LLMs by only modifying a small portion of LLM parameters, but it suffers from user domain shifts, resulting in repetitive training and losing resource efficiency. Conventional techniques to address domain shift issues often involve complex neural networks and sophisticated training, which are incompatible for PT for edge LLMs. Therefore, an open research question is how to address domain shift issues for edge LLMs with limited resources. In this paper, we propose a prompt tuning framework for edge LLMs, exploiting the benefits offered by non-volatile computing-in-memory (NVCiM) architectures. We introduce a novel NVCiM-assisted PT framework, where we narrow down the core operations to matrix-matrix multiplication, which can then be accelerated by performing in-situ computation on NVCiM. To the best of our knowledge, this is the first work employing NVCiM to improve the edge LLM PT performance.

As emerging computing paradigms push beyond the limitations of traditional CMOS-based computing using Von Neumann architectures, there is a growing need to rethink and extend Electronic Design Automation (EDA) methodologies to support their unique characteristics. These paradigms—including Approximate Computing, In-Memory Computing, Reconfigurable Field-Effect Transistors (RFETs), and Photonic Computing—represent diverse and promising directions beyond conventional digital design. Collectively, they offer transformative potential for achieving significant improvements in energy efficiency, computational speed, and architectural scalability. For example, application-specific approximate computing enables the design of custom arithmetic circuits that exploit application-level error resilience, allowing for optimized accuracy–power–performance–area (PPA) trade-offs in error-tolerant applications. Similarly, processing-in-non-volatile memories, such as those based on Ferroelectric Field-effect Transistors (FeFETs), enhances energy efficiency by enabling analog computation—particularly for operations like matrix multiplication—directly within the memory arrays. The intrinsic polymorphism of RFETs supports compact, multifunctional logic gates and introduces new opportunities for circuit-level obfuscation and security-aware design. Likewise, photonic analog wavefront computing offers substantial gains in latency and energy efficiency by encoding and processing information in the analog optical domain, leveraging phenomena such as diffraction and interference to perform computation at the speed of light. However, they also introduce a host of new challenges in circuit and architecture design, such as vast and irregular design spaces, analog and non-Boolean behavior, and new device-level constraints that existing EDA tools are not capable of handling. To this end, the current article focuses on the development of efficient and robust EDA frameworks that can enable the practical realization of circuits and architectures in these emerging domains.

Pattern search is crucial in numerous analytic applications for retrieving data entries akin to the query. Content Addressable Memories (CAMs), an in-memory computing fabric, directly compare input queries with stored entries through embedded comparison logic, facilitating fast parallel pattern search in memory. While conventional CAM designs offer exact match functionality, they are inadequate for meeting the approximate search needs of emerging data-intensive applications. Some recent CAM designs propose approximate matching functions, but they face limitations such as excessively large cell area or the inability to precisely control the degree of approximation. In this paper, we propose TAP-CAM, a novel ferroelectric field effect transistor (FeFET) based ternary CAM (TCAM) capable of both exact and tunable approximate matching. TAP-CAM employs a compact 2FeFET-2R cell structure as the entry storage unit, and similarities in Hamming distances between input queries and stored entries are measured using an evaluation transistor associated with the matchline of CAM array. The operation, robustness and performance of the proposed design at array level have been discussed and evaluated, respectively. We conduct a case study of K-nearest neighbor (KNN) search to benchmark the proposed TAP-CAM at application level. Results demonstrate that compared to 16T CMOS CAM with exact match functionality, TAP-CAM achieves a 16.95× energy improvement, along with a 3.06% accuracy enhancement. Compared to 2FeFET TCAM with approximate match functionality, TAP-CAM achieves a 6.78× energy improvement.

Content addressable memory (CAM) is a special-purpose search engine that can support parallel search directly in memory. CAMs are of increasing interest for machine learning and data analytics applications that require intensive search operations. However, conventional CMOS CAMs have large cell areas and high energy consumption, which limits applicability. Also, many data-intensive applications need more efficient data representation and approximate matching functions, which may not be efficiently realized by conventional ternary CAMs. As such, we introduce a more compact and high-performance CAM design based on non-volatile ferroelectic FET devices. Furthermore, we present a reconfigurable CAM design, MHCAM, to support approximate search for multi-dimensional data. We use DNA alignment as a proxy application to illustrate the design’s application-level benefits.

Ternary content addressable memory (TCAM), widely used in network routers and high-associativity caches, is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are a promising candidate for implementing TCAM owing to their high ON/OFF ratio, non-volatility, and CMOS compatibility. However, conventional single-gate FeFETs (SG-FeFETs) suffer from relatively high write voltage, low endurance, potential read disturbance, and face scaling challenges. Recently, a double-gate FeFET (DG-FeFET) has been proposed and outperforms SG-FeFETs in many aspects. This paper investigates TCAM design challenges specific to DG-FeFETs and introduces a novel 1.5T1Fe TCAM design based on DG-FeFETs. A 2-step search with early termination is employed to reduce the cell area and improve energy efficiency. A shared driver design is proposed to reduce the peripherals area. Detailed analysis and SPICE simulation show that the 1.5T1Fe DGTCAM leads to superior search speed and energy efficiency. The 1.5T1Fe TCAM design can also be built with SG-FeFETs, which achieve search latency and energy improvement compared with 2FeFET TCAM.

There is great interest in “end-to-end” analysis that captures how innovation at the materials, device, and/or archi-tectural levels will impact figures of merit at the application-level. However, there are numerous combinations of devices and architectures to study, and we must establish systematic ways to accurately explore and cull a vast design space. We aim to capture how innovations at the materials/device-level may ultimately impact figures of merit associated with both existing and emerging technologies that may be employed for either logic and/or memory. We will highlight how collaborations with researchers at these levels of the design hierarchy - as well as efforts to help construct well-calibrated device models - can in-turn support architectural design space explorations that will help to identify the most promising ways to use new technologies to support application-level workloads of interest. For given compute workloads, we can then quantitatively assess the potential benefits of technology-driven architectures to identify the most promising paths forward. Because of the large number of potentially interesting device-architecture combinations, it is of the utmost importance to develop well-calibrated analytical modeling tools to more rapidly assess the potential value of a given (likely heterogeneous) solution. We highlight recent efforts and needs in this space.

On-device learning is essential to achieve intelligence at the edge, where it is desirable to learn from few samples or even just a single sample. Memory-augmented neural networks (MANNs), which augment neural networks with an attentional memory, can draw on already learnt knowledge patterns and adapt to new but similar tasks. Implementing MANNs on conventional architectures can require a significant amount of costly data transfer, thereby limiting the practical use of MANNs at the edge. In this paper, we introduce algorithm/hardware co-design solutions which exploit compact designs of content addressable memories (CAMs) based on emerging non-volatile memories (e.g., FeFETs) to implement energy-efficient MANN accelerators. The design space of MANN accelerators is systematically analyzed by considering different circuit, architecture, and algorithm options. We further discuss how hyper-dimensional representations of data can be combined with MANNs to overcome the negative effect of device/circuit variabilities on learning quality, thus achieving not only energy-efficient but also accuracy-competitive on-device learning at the edge. We also investigate modeling of device-to-device (D2D) variation in FeFETs using the write-with-verify approach and detail its impact on the energy, delay, and accuracy of the MANN application.

Pattern searches, a key operation in many data analytic applications, often deal with data represented by multiple states per dimension. However, hash tables, a common software-based pattern search approach, require a large amount of additional memory, and thus, are limited by the memory wall. A hardware-based solution is to use content-addressable memories (CAMs) that support fast associative searches in parallel. Ternary CAMs (TCAMs) support bit-wise Hamming distance (HD) based searches. Detecting the HD of vectors with multiple states per dimension (i.e., multi-state Hamming distance (MSHD)) can be implemented on TCAMs with one-hot encoding, but requires one TCAM cell per state, leading to a higher area, latency, and energy overhead. We propose a Ferroelectric FET (FeFET)-based multi-state CAM design, MHCAM, which implements MSHD searches in a dense FeFET-based memory array. MHCAM only uses$\lceil log_{2} s \rceil ~2$FeFET CAM cells to represent$s$states or symbols per dimension, and can be reconfigured to 2-bit/4-bit/6-bit/8-bit dimensions. A low-cost sensing circuit with matchline voltage scaling technique is introduced to perform both exact match and threshold match. We use DNA and protein pre-alignment filtering as application case studies to evaluate the application-level benefit of MHCAM. DNA and protein pre-alignment filtering achieve$3.8\times /4.7\times $speedup and$1.7\times /1.8\times $energy improvement compared with the state-of-the-art 2FeFET TCAM-based implementation.

Content addressable memories (CAMs), a special-purpose in-memory computing (IMC) unit, support parallel searches directly in memory. There are growing interests in CAMs for data-intensive applications such as machine learning and bioinformatics. The design space for CAMs is rapidly expanding. In addition to traditional ternary CAMs (TCAMs), analog CAM (ACAM) and multi-bit CAM (MCAM) designs based on various non-volatile memory (NVM) devices have been recently introduced and may offer higher density, better energy efficiency, and non-volatility. Furthermore, aside from the widely-used exact match based search, CAM-based approximate matches have been proposed to further extend the utility of CAMs to new application spaces. For this memory architecture, evaluating different CAM design options for a given application is becoming more challenging. This paper presents Eva-CAM, a circuit/architecture-level modeling and evaluation tool for CAMs. Eva-CAM supports TCAM, ACAM, and MCAM designs implemented in non-volatile memories, for both exact and approximate match types. It also allows for the exploration of CAM array structures and sensing circuits. Eva-CAM has been validated with HSPICE simulation results and chip measurements. A comprehensive case study is described for FeFET CAM design space exploration.