Presents a physical model of reverse short-channel effects on threshold voltage caused by lateral diffusion of the Frenkel pairs (interstitial-vacancy) induced by ion implantation in source/drain region of n-channel MOS devices. Based on the process and device simulation, it is shown that lateral diffusion of the Frenkel pairs enhances diffusion of channel dopant, and results in nonuniform lateral distribution. This phenomenon causes the threshold voltage increase in the short-channel devices. The authors extracted parameters on point-defect diffusion from the comparison of calculated results with experimental data on threshold voltage. Calculated arsenic profile in the source/drain region using those parameters shows good agreement with the experimental data measured by secondary ion mass spectroscopy (SIMS). The close agreement between simulation and experimental results both on the arsenic profile in source/drain region and threshold voltage confirms the validity of the model and extracted parameters.>