ADAM, a static MOSFET simulator based on a generalized stream function approach which automatically satisfies the continuity equations for full two-carrier transport, is described. This approach introduces a stream potential to account for source/sink terms in the continuity equations. The coupled, nonlinear equations are solved sequentially using H.K. Gummel's 1964 algorithm while the individual linear systems are solved using H.L. Stone's (1968) SIP method. Rectangular MOSFET geometries, which can include substrate insulation (SOS/SOI), can be simulated. Impurity profiles can be input from the SUPREM-3 (1-D) or ROMANS (2-D) process simulators. A multicomponent stream vector approach is used to treat the multiterminal current flow. Convergence of terminal currents occurs rapidly and leads to an efficient simulator in spite of the extra equations to be solved. The generalized stream function approach is described, along with boundary conditions and discretization. Simulation results are presented and the interpretation of the calculated stream functions discussed.>