Demonstration venue · read-only. Every page can be browsed; the buttons that would change it are switched off. Create an account to run TaxoReview on your own data.
EDBT 2026 Demo / reviewers in the wild / expert

Zilu Wu

dblp:77/590 · DBLP profile ↗
← Back
2ranked-venue papers
1as first author
1since 2021 · last 2025
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1 · 1 first-authorGraphics, computer vision, multimedia, augmented reality and games · 1 · 1 since 2021

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Electronic design automation · 100%

Topics — the 3 heaviest of 3, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Electronic design automation
boundary element method		 0.012001
Application of BEM to high-voltage junction termination · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2001
Electronic design automation › technology computer-aided design
device simulation		 0.012001
Application of BEM to high-voltage junction termination · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2001
Electronic design automation › technology computer-aided design
semiconductor device simulation		 0.012001
Application of BEM to high-voltage junction termination · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2001

Methods — techniques the papers use, named apart from their topics

critical electric field concept · 0.0boundary element method · 0.0
YearPublicationVenuePosition
2025 Micro-expression recognition based on contextual transformer networks
Zilu Wu, Renbiao Wu
 Vis. Comput.2
2001 Application of BEM to high-voltage junction termination
abstract
Ideas for using the boundary element method (BEM) with the concept of critical electric field for simulation of high-voltage junction termination are introduced. Approaches for dealing with interface charges, depleted regions, and metal field plates are presented. Rules used to develop and apply the BEM program are given. Simulation of one silicon-on-insulator diode is performed and the results are compared with those obtained using the finite difference method.
Zilu Wu, Yumin Gao, Jinsheng Luo, Xun Hou, Guofu Chen
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1