Process technology developments enable the creation of three-dimensional stacked ICs (3D-SICs) interconnected by means of Through-Silicon Vias (TSVs). This paper presents a 3D Design-for-Test (DfT) architecture for such 3D-SICs that allows pre-bond die testing as well as mid-bond and post-bond stack testing. The architecture enables a modular test approach, in which the various dies, their embedded IP cores, the inter-die TSV-based interconnects, and the external I/Os can be tested as separate units, which allows flexible optimization of the 3D-SIC test flow and provides yield monitoring and first-order fault diagnosis. The architecture builds on and reuses existing DfT hardware at the core, die, and product level. Its main new component is a die-level wrapper, which can be based on either IEEE Std 1149.1 or IEEE Std 1500. The paper presents a conceptual overview of the architecture, as well as implementation aspects. Experimental results show that the implementation costs are negligible for medium to large dies.

Through-silicon via (TSV)-based 3-D stacked ICs (SICs) are becoming increasingly important in the semiconductor industry. In this paper, we address test architecture optimization for 3-D stacked ICs implemented using TSVs. We consider two cases, namely 3-D SICs with die-level test architectures that are either fixed or still need to be designed. We next present mathematical programming techniques to derive optimal solutions for the architecture optimization problem for both cases. Experimental results for three handcrafted 3-D SICs comprising of various systems-on-a-chip (SoCs) from the ITC'02 SoC test benchmarks show that compared to the baseline method of sequentially testing all dies, the proposed solutions can achieve significant reduction in test length. This is achieved through optimal test schedules enabled by the test architecture. We also show that increasing the number of test pins typically provides a greater reduction in test length compared to an increase in the number of test TSVs. Furthermore, we show that shorter test lengths are generally achieved with the larger, more complex dies lower in the stack. This is because test data must pass through every die lower in a stack in order to reach its target die, and with the larger dies lower in the stack, more test bandwidth may be provided to these dies using fewer routing resources.

Testing of 3D stacked ICs (SICs) is becoming increasingly important in the semiconductor industry. In this paper, we address the problem of test architecture optimization for 3D stacked ICs implemented using Through-Silicon Vias (TSVs) technology. We consider 3D-SICs with both fixed given and yet-to-be-designed test architectures on each die and show that both corresponding problem variants are NP-hard. We next present mathematical programming techniques to derive optimal solutions for these problems. Experimental results for three handcrafted 3D-SICs of various SOCs from the ITC'02 SOC test benchmarks show that compared to the baseline method of sequentially testing all dies in a stack, the proposed solutions can achieve up to a 57% reduction in test time. We also show that increasing the number of test pins provides a greater reduction in test time compared to an increase in the number of TSVs. Furthermore, it is shown that 3D stacks with large and complex dies at lower layers require less test time than stacks with complex dies at higher layers.

Three-dimensional stacked ICs (3D-SICs) based on Through-Silicon Vias (TSV) promise high-performance low-power functionality in a smaller form factor at lower cost. Stacking entire wafers has attractive benefits, but unfortunately suffers from low compound stack yield, as one cannot prevent to stack a bad die to a good die or vice versa. Matching individual wafers from repositories of pre-tested wafers to each other is a simple yet effective method to significantly increase the compound stack yield. In this paper, we present a mathematical model, which shows that the yield increase depends on (1) the number of stack tiers, (2) the number of dies per wafer, (3) the die yield, and (4) the repository size. Simulation results demonstrate that, for realistic cases, relative yield increases of 0.5% to 10% can be achieved. We also show that the required investment, in terms of a limited increase in either test or package costs, is typically well justified.

Three-Dimensional Stacked IC (3D-SIC) is an emerging technology that provides heterogeneous integration, higher performance, and lower power consumption compared to planar ICs. Fabricating these 3D-SICs using Wafer-to-Wafer (W2W) stacking has several advantages including: high throughput, thin wafer and small die handling, and high TSV density. However, W2W stacking suffers from low compound yield. This paper investigates various matching processes by using different wafer matching criteria in order to maximize the compound yield. It first establishes a framework covering different matching processes and wafer matching criteria for both replenished and non-replenished wafer repositories. Thereafter, a subset of the framework is analyzed. The simulation results show that the compound yield not only depends on the number of stacked dies, die yield, and repository size, but it also strongly depends on the used matching process and the wafer matching criteria. Moreover, by choosing an appropriate wafer matching scenario (e.g., wafer matching process, criterion etc.), the compound yield can be improved up to 13.4% relative to random W2W stacking.

New process technology developments enable the creation of three-dimensional stacked ICs (3D-SICs) interconnected by means of Through-Silicon Vias (TSVs). This paper presents a DfT test access architecture for such 3D-SICs that allows for both pre-bond die testing and post-bond stack testing. The DfT architecture is based on a modular test approach, in which the various dies, their embedded IP cores, the inter-die TSV-based interconnects, and the external I/Os can be tested as separate units to allow optimization of the 3D-SIC test flow. The architecture builds on and reuses existing DfT hardware at the core, die, and product level. It adds a die-level wrapper, which is based on IEEE 1500, with the following novel features: (1) dedicated probe pads on the non-bottom dies to facilitate pre-bond die testing, (2) TestElevators that transport test control and data signals up and down during post-bond stack testing, and (3) a hierarchical Wrapper Instruction Register (WIR) chain. The paper also hints at opportunities for optimization and standardization of this architecture.