With the prosperous development of Deep Neural Network (DNNs), numerous Process-In-Memory (PIM) designs have emerged to accelerate DNN models with exceptional throughput and energy-efficiency. PIM accelerators based on Non-Volatile Memory (NVM) or volatile memory offer distinct advantages for computational efficiency and performance. NVM based PIM accelerators, demonstrated success in DNN inference, face limitations in on-device learning due to high write energy, latency, and instability. Conversely, fast volatile memories, like SRAM, offer rapid read/write operations for DNN training, but suffer from significant leakage currents and large memory footprints. In this paper, for the first time, we present a fully-digital sparse processing in hybrid NVM-SRAM design, synergistically combines the strengths of NVM and SRAM, tailored for on-device continual learning. Our designed NVM and SRAM based PIM circuit macros could support both storage and processing of N:M structured sparsity pattern, significantly improving the storage and computing efficiency. Exhaustive experiments demonstrate that our hybrid system effectively reduces area and power consumption while maintaining high accuracy, offering a scalable and versatile solution for on-device continual learning.

Due to the separate memory and computation units in traditional Von-Neumann architecture, massive data transfer dominates the overall computing system’s power and latency, known as the ‘Memory-Wall’ issue. Especially with ever-increasing deep learning-based AI model size and computing complexity, it becomes the bottleneck for state-of-the-art AI computing systems. To address this challenge, In-Memory Computing (IMC) based Neural Network accelerators have been widely investigated to support AI computing within memory. However, most of those works focus only on inference. The on-device training and continual learning have not been well explored yet. In this work, for the first time, we introduce on-device continual learning with STT-assisted-SOT (SAS) Magnetic Random Access Memory (MRAM) based IMC system. On the hardware side, we have fabricated a SAS-MRAM device prototype with 4 Magnetic Tunnel Junctions (MTJ, each at 100nm × 50nm) sharing a common heavy metal layer, achieving significantly improved memory writing and area efficiency compared to traditional SOT-MRAM. Next, we designed fully digital IMC circuits with our SAS-MRAM to support both neural network inference and on-device learning. To enable efficient on-device continual learning for new task data, we present an 8-bit integer (INT8) based continual learning algorithm that utilizes our SAS-MRAM IMC-supported bit-serial digital in-memory convolution operations to train a small parallel reprogramming Network (Rep-Net) while freezing the major backbone model. Extensive studies have been presented based on our fabricated SAS-MRAM device prototype, cross-layer device-circuit benchmarking and simulation, as well as the on-device continual learning system evaluation.

This paper presents a hand-held, portable biosensor platform for quantitative biomarker measurement. By combining magnetic nanoparticle (MNP) tags with giant magnetoresistive (GMR) spin-valve sensors, the hand-held platform achieves highly sensitive (picomolar) and specific biomarker detection in less than 20 minutes. The rapid analysis and potential low cost make this technology ideal for point-of-care (POC) diagnostics. Furthermore, this platform is able to detect multiple biomarkers simultaneously in a single assay, creating a promising diagnostic tool for a vast number of applications.