We present a new analytical model to predict the spatial location of amorphous phases in ion-implanted single-crystalline silicon using results of multidimensional Monte Carlo simulations. Our approach is based on the concept of the critical damage energy density. Additionally, the self-annealing of radiation damage during ion implantation is taken into account because this effect is crucial for a correct prediction of amorphization. Two aspects of self-annealing are considered, namely, the temperature and the spatial dependence. The latter is related to the local damage energy density, which is simulated by one-, two-, and three-dimensional modules of our Monte Carlo program MCIMPL of the technology CAD framework VISTA. Therefore, the formation and the shape of amorphous regions in single-crystalline silicon can be predicted as a result of Monte Carlo simulations of ion implantation. The suggested model accurately reproduces the results of direct microscopic observations (XTEM measurements) of amorphous layers in silicon after a silicon self-implantation, which are available for a temperature range of 82-296 K.

A new two-dimensional process modeling program written in Fortran is described. For the first time, this program allows the simulation of all important processing steps occurring in typical sequences involved in the fabrication of integrated circuits such as doping, oxidation, lithography, etching, and layer deposition. The program possesses a modular structure to allow for easy changing and improvement of process models as well as of mathematical procedures. The program is menu driven to make it easy to use for non-experts and it is readily usable with different computer systems.