Standard cells are essential components of modern digital circuit designs. With process technologies advancing beyond the 5nm node, more routability issues have arisen due to the decreasing number of routing tracks, increasing number and complexity of design rules, and strict patterning rules. Automatic standard cell synthesis tools are struggling to design cells with severe routability issues. In this paper, we propose a routability-driven standard cell synthesis framework using a novel pin density aware congestion metric, lattice graph routability modelling approach, and dynamic external pin allocation methodology to generate routability optimized layouts. On a benchmark of 94 complex and hard-to-route standard cells, NVCell 2 improves the number of routable and LVS/DRC clean cell layouts by 84.0% and 87.2%, respectively. NVCell 2 can generate 98.9% of cells LVS/DRC clean, with 13.9% of the cells having smaller area, compared to an industrial standard cell library with over 1000 standard cells.

Standard cell layout in advanced technology nodes are done manually in the industry today. Automating standard cell layout process, in particular the routing step, are challenging because of the constraints of enormous design rules. In this paper we propose a machine learning based approach that applies genetic algorithm to create initial routing candidates and uses reinforcement learning (RL) to fix the design rule violations incrementally. A design rule checker feedbacks the violations to the RL agent and the agent learns how to fix them based on the data. This approach is also applicable to future technology nodes with unseen design rules. We demonstrate the effectiveness of this approach on a number of standard cells. We have shown that it can route a cell which is deemed unroutable manually, reducing the cell size by 11%.

High quality standard cell layout automation in advanced technology nodes is still challenging in the industry today because of complex design rules. In this paper we introduce an automatic standard cell layout generator called NVCell that can generate layouts with equal or smaller area for over 90% of single row cells in an industry standard cell library on an advanced technology node. NVCell leverages reinforcement learning (RL) to fix design rule violations during routing and to generate efficient placements.

This article consists of a collection of slides from the author's conference presentation.

Deep neural networks have been adopted in a wide range of application domains, leading to high demand for inference accelerators. However, the high cost associated with ASIC hardware design makes it challenging to build custom accelerators for different targets. To lower design cost, we propose MAGNet, a modular accelerator generator for neural networks. MAGNet takes a target application consisting of one or more neural networks along with hardware constraints as input and produces synthesizable RTL for a neural network accelerator ASIC as well as valid mappings for running the target networks on the generated hardware. MAGNet consists of three key components: (i) MAGNet Designer, a highly configurable architectural template designed in C++ and synthesizable by high-level synthesis tools. MAGNet Designer supports a wide range of design-time parameters such as different data formats, diverse memory hierarchies, and dataflows. (ii) MAGNet Mapper, an automated framework for exploring different software mappings for executing a neural network on the generated hardware. (iii) MAGNet Tuner, a design space exploration framework encompassing the designer, the mapper, and a deep learning framework to enable fast design space exploration and co-optimization of architecture and application. We demonstrate the utility of MAGNet by designing an inference accelerator optimized for image classification application using three different neural networks-AlexNet, ResNet, and DriveNet. MAGNet-generated hardware is highly efficient and leverages a novel multi-level dataflow to achieve 40 fJ/op and 2.8 TOPS/mm2in a 16nm technology node for the ResNet-50 benchmark with <; 1% accuracy loss on the ImageNet dataset.

Package-level integration using multi-chip-modules (MCMs) is a promising approach for building large-scale systems. Compared to a large monolithic die, an MCM combines many smaller chiplets into a larger system, substantially reducing fabrication and design costs. Current MCMs typically only contain a handful of coarse-grained large chiplets due to the high area, performance, and energy overheads associated with inter-chiplet communication. This work investigates and quantifies the costs and benefits of using MCMs with fine-grained chiplets for deep learning inference, an application area with large compute and on-chip storage requirements. To evaluate the approach, we architected, implemented, fabricated, and tested Simba, a 36-chiplet prototype MCM system for deep-learning inference. Each chiplet achieves 4 TOPS peak performance, and the 36-chiplet MCM package achieves up to 128 TOPS and up to 6.1 TOPS/W. The MCM is configurable to support a flexible mapping of DNN layers to the distributed compute and storage units. To mitigate inter-chiplet communication overheads, we introduce three tiling optimizations that improve data locality. These optimizations achieve up to 16% speedup compared to the baseline layer mapping. Our evaluation shows that Simba can process 1988 images/s running ResNet-50 with batch size of one, delivering inference latency of 0.50 ms.

A high-productivity digital VLSI flow for designing complex SoCs is presented. The flow includes high-level synthesis tools, an object-oriented library of synthesizable SystemC and C++ components, and a modular VLSI physical design approach based on fine-grained globally asynchronous locally synchronous (GALS) clocking. The flow was demonstrated on a 16nm FinFET testchip targeting machine learning and computer vision.

A low leakage memory is an indispensable part of any sensor application that spends significant time in standby (sleep) mode. Although using high Vth (HVT) devices is the most straightforward way to reduce leakage, it also limits operation speed during active mode. In this paper, a low leakage 10T SRAM cell, which compensates for operation speed using a readily available secondary supply, is proposed in a 0.18μm CMOS process. It achieves the lowest-to-date leakage power consumption and achieves robust operation at low voltage without sacrificing operation speed. The 10T SRAM has a bit cell area of 17.48μm2 and is measured to consume 1.85fW per bit at 0.35V.