Thanks to recent technology advances, the exploration of the vertical dimension has been shown to be more than a dream for designers. Among those technologies, the vertical transistor has not been exploited yet. This paper describes a novel implementation of logic gates fully benefiting of nanowire-based vertical transistors embedded within the metal lines. The logic design in this technology is explored and its performance is evaluated. A comparison made on an equivalent technology node shows that our cells reduce area and delay by a factor of 31x and 2x respectively. Large reconfigurable logic circuits have been benchmarked showing an improvement of area and delay by 46% and 48% on average.

Silicon Nanowire technology has been demonstrated to be a promising candidate to fabricate nanowire crossbars. The use of such devices in a real architectural as well as in a design environment is an ongoing research topic. In this paper, we investigate the use of a lithography-based industrial process for designing a 4-to-1 multiplexer in a crossbar circuit. We show that by considering the line parasitic, the crossbar demonstrates poor performance in a 65-nm technology, while the area and power savings are about 6× and 1.5× respectively vs. the CMOS implementation. However, extrapolation to the 9-nm node shows a 2× better performance and 67× area saving.

Recently, several emerging technologies have been reported as potential candidates for controllable ambipolar devices. Controllable ambipolarity is a desirable property that enables the on-line configurability of n-type and p-type device polarity. In this paper, we introduce a new design methodology for logic gates based on controllable ambipolar devices, with an emphasis on carbon nanotubes as the candidate technology. Our technique results in ambipolar gates with a higher expressive power than conventional complementary metal-oxidesemiconductor (CMOS) libraries. We propose a library of static ambipolar carbon nanotube field effect transistor (CNTFET) gates based on generalized NOR-NAND-AOI-OAI primitives, which efficiently implements XOR-based functions. Technology mapping of several multi-level logic benchmarks that extensively use the XOR function, including multipliers, adders, and linear circuits, with ambipolar CNTFET logic gates indicates that on average, it is possible to reduce the number of logic levels by 42%, the delay by 26%, and the power consumption by 32%, resulting in a energy-delay-product (EDP) reduction of 59 % over the same circuits mapped with unipolar CNTFET logic gates. Based on the projections in [1], where it is stated that defectfree CNTFETs will provide a 5x performance improvement over metal-oxide-semiconductor field effect transistors, the ambipolar library provides a performance improvement of 7x, a 57% reduction in power consumption, and a 20x improvement in EDP over the CMOS library.

Ambipolar devices have been reported in many technologies, including carbon nanotube field effect transistors (CNTFETs). The ambipolarity can be in-field controlled with a second gate, enabling the design of generalized logic gates with a high expressive power, i.e., the ability to implement more functions with fewer physical resources. Reported circuit design techniques using generalized logic gates show an improvement in terms of area and delay with respect to conventional CMOS circuits. In this paper, we characterize and study the power dissipation of generalized logic gates based on am-bipolar CNTFETs. Our results show that the logic gates in the generalized CNTFET library dissipate 28% less power on average than a library of conventional CMOS gates. Further, we also perform logic synthesis and technology mapping, demonstrating that synthesized circuits mapped with the library of ambipolar logic gates dissipate 57% less power than CMOS circuits. By combining the benefits coming from the expressive power of generalized logic and from the CNTFET technology, we demonstrate that we can reduce the energy-delay-product by a factor of 20× using the ambipolar CNTFET technology.

Back-end-of-line non-volatile resistive memories like Phase Change Memories (PCMs) are promising to solve memory issues in different architectures. In this paper, we investigate the usage of PCM to build an elementary configuration memory node for reconfigurable logic, such as Field-Programmable Gate Arrays (FPGAs). We propose an elementary circuit realized by 2 resistive memories and 1 programming transistor able to store a configuration voltage. We investigate the proposed node in terms of area and write time and we assess its impact on complex circuits. We show that the elementary memory node yields an improvement in area and write time of 1.5x and 16x respectively vs. a regular Flash implementation. Implemented in FPGAs, the memory node yields a delay reduction up to 51%, thanks to the reduction of dimensions and low on-resistance of PCMs.

Memristors are passive circuit elements that behave as resistors with memory. The recently illustrated experimental realization of memristive behaviour of Polysilicon Nanowires has triggered interest in this concept, which is promising to a wide variety of application areas that include neuromorphic circuits. In order to progress with practical implementations that use this technology we need to expand our understanding of the conduction mechanisms in these structures and of the underlying relationship between device behavior and process manufacturing parameters. In this paper we explore these mechanisms through detailed simulation, which includes model calibration and correlation with experimental results. Through fitting of the test results we identify a unique set of density of states that characterize the particular technology implemented.

This paper reports on the memory and memristive effects of Schottky barrier field effect transistors (SBFET) with gate-all-around (GAA) configuration and Si nanowire (SiNW) channel. Similar behavior has also been investigated for SBFETs with poly-Si nanowire (poly-SiNW) channel in back-gate configuration. The memristive devices presented here have the potential of a very high integration density, and they are suitable for hybrid CMOS co-fabrication with a CMOS-compatible process. We show that 2 different regimes are possible, making these devices suitable either for volatile ambipolar memory or resistive random access memory (RRAM) applications. In addition, frequency- and amplitude- dependence of the memristive behavior are reported.

This paper discusses the newly introduced vertically-stacked silicon nanowire gate-all-around field-effect-transistor technology and its advantages for higher density layout design. The vertical nanowire stacking technology allows very-high density arrangement of nanowire transistors with near-ideal characteristics, and opens the possibility for design optimization by adjusting the number of nanowire stacks without affecting the footprint area of the device. Several libraries for combinational logic synthesis have been designed and implemented for the synthesis of carry-lookahead adders, using the vertically-stacked nanowire technology. The reduction in silicon active area occupancy of vertically-stacked gates are envisaged of great significance for regular cell mapping, in disruptive future applications based on nanowire transistor arrays.

The use of nanowire crossbars to build devices with large storage capabilities is a very promising architectural paradigm for forthcoming nanoscale memory devices. However, this new type of memory devices raises questions regarding how to test their correct operation. In particular, the variability affecting the decoder is expected to make very complex the test of these new devices. In this paper we present a method to simplify the test of these new devices by using a current thresholder to detect badly addressed nanowires. In the proposed method, the thresholder design is based on a stochastic and perturbative model of the current through the nanowires. Thus, the calculated thresholder parameters are robust against technology variation. As our experimental results indicate, the thresholder error probability is initially only ~ 10-4, which can be also reduced further (up to ~ 60×) by trading-off only ~ 35% area overhead in the memory.

Nanowire crossbar circuits are an emerging architectural paradigm that promises a higher integration density and an improved fault-tolerance due to its reconfigurability. In this paper, we propose for the first time the utilization of the multi-spacer patterning technique to fabricate nanowire crossbars with a high cross-point density up to 1010 cm−2. We propose a novel decoder fabrication method that can be included in a process dedicated to the multi-spacer patterning technique. We address the technology problems consisting in the variability and fabrication complexity at the design level by optimizing the encoding scheme. We show an overall reduction of the variability by 18% and a cancelation of the fabrication complexity overhead.

Silicon nanowires are a promising solution to address the increasing challenges of fabrication and design at the future nodes of the Complementary Metal-Oxide-Semiconductor (CMOS) Technology roadmap. Despite the attractive opportunity that offers their organization onto regular crossbars, the problem of designing the nano-wire decoder is still challenging and highly dependent on the nanowire fabrication technology. In this paper, we introduce a novel design style and encoding scheme for decoding nanowires fabricated with the Multi-Spacer-Patterning Technique (MSPT); and we present a method based on Gray codes that reduces the fabrication cost and improves the decoder reliability. We show that by arranging the code in a Gray code fashion, we decrease the fabrication complexity by 17% and the variability by 18% on average. By optimizing the decoder parameters, the simulations showed an improvement of the crossbar yield by 40% and a reduction of the effective bit area by 51% to 169 nm2.

This paper exploits the unique in-field controllability of the device polarity of ambipolar carbon nanotube field effect transistors (CNTFETs) to design a technology library with higher expressive power than conventional CMOS libraries. Based on generalized NOR-NAND-AOI-OAI primitives, the proposed library of static ambipolar CNTFET gates efficiently implements XOR functions, provides full-swing outputs, and is extensible to alternate forms with area-performance tradeoffs. Since the design of the gates can be regularized, the ability to functionalize them in-field opens opportunities for novel regular fabrics based on ambipolar CNTFETs. Technology mapping of several multi-level logic benchmarks - including multipliers, adders, and linear circuits-indicates that on average, it is possible to reduce both the number of gates and area by ~ 38% while also improving performance by 6.9times.

Recently, it was demonstrated that the polarity of carbon nanotube field effect transistors can be electrically controlled. In this paper we show how Programmable Logic Arrays (PLA) can be built out of these devices, and we illustrate how they outperform usual PLA by internal signal inversion. The simulations show an area saving up to approximately 21% and decrease of the delay in PLA-based FPGA by 50%. We also show that this architecture is suitable for high-performance design tools and defect-tolerance approaches.

The fabrication of crossbar memories with sublithographic features is expected to be feasible within several emerging technologies; in all of them, the nanowire (NW) decoder is a critical part since it bridges the sublithographic wires to the outer circuitry that is defined on the lithography scale. In this paper, we evaluate the addressing scheme of the decoder circuit for NW crossbar arrays, based on the existing technological solutions for threshold voltage differentiation of NW devices. This is equivalent to using a multivalued logic addressing scheme. With this approach, it is possible to reduce the decoder size and keep it defect tolerant. We formally define two types of multivalued codes (i.e., hot and reflexive codes), and we estimate their yield under high variability conditions. Multivalued hot decoders yield better area saving thann-ary reflexive codes, and under severe conditions, reflexive codes enable a nonvanishing part of the code space to randomly recover. The choice of the optimal combination of decoder type and logic level saves area up to 24%. We also show that the precision of the addressing voltages when a high variability affects the threshold voltages is a crucial parameter for the decoder design and permits large savings in memory area. Moreover, a precise knowledge about the variability level improves the design of memory decoders by giving the right optimal code.

Several alternative building blocks have been proposed to replace planar transistors, among which a prominent spot belongs to nanometric filaments such as silicon nanowires (SiNWs) and carbon nanotubes (CNTs). However, chips leveraging these nanoscale structures are expected to be affected by a large amount of manufacturing faults, way beyond what chip architects have learned to counter. In this paper, the authors show a design flow, based on software mapping algorithms, to improve the yield of nanometric programmable logic arrays (PLAs). While further improvements to the manufacturing technology will be needed to make these devices fully usable, our flow can significantly shrink the gap between current and desired yield levels. Also, the approach does not need post-fabrication functional analysis and mapping, therefore dramatically cutting on verification costs. The authors check PLA yields by means of an accurate analyzer after Monte Carlo fault injection. The authors show that, compared to a baseline policy of wire replication, they achieve equal or better yields (8% over a set of designs) depending on the underlying defect assumptions

Several technologies with sub-lithographic features are targeting the fabrication of crossbar memories in which the nanowire decoder is playing a major role. In this paper, we suggest a way to reduce the decoder size and keep it defect tolerant by using multiple threshold voltages (VT), which is enabled by our underlying technology. We define two types of multi-valued decoders and model the defects they undergo due to the VT variation. Multi-valued hot decoders yield better area saving than n-ary reflexive codes (NRC), and under severe conditions, NRC enables a non-vanishing part of the code space to recover. There are many combinations of decoder type and number of VT’s yielding equal effective memory capacities. The optimal choice saves area up to 24%. We also show that the precision of the addressing voltages for decoders with unreliable VT’s is a crucial parameter for the decoder design and permits large savings in memory area.