Demo Data from EDBT 2026 / reviewers in the wild / expert
Kyu-Il Lee
dblp:90/4340
· DBLP profile ↗
2ranked-venue papers
2as first author
0since 2021 · last 2005
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 2 · 2 first-author
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
2 papers |
Integrated circuit design · 62% Electronic design automation · 38% |
Topics — the 6 heaviest of 6, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design
analog and mixed-signal circuits |
0.1 | 2 | 2005 | Efficient frequency-domain simulation technique for short-channel MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2005 Simple frequency-domain analysis of MOSFET-includingnonquasi-static effect · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2001 |
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOSFET compact model |
0.1 | 1 | 2005 | Efficient frequency-domain simulation technique for short-channel MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2005 |
Electronic design automation › technology computer-aided design
process and device simulation |
0.1 | 1 | 2005 | Efficient frequency-domain simulation technique for short-channel MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2005 |
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOSFET modeling |
0.0 | 1 | 2001 | Simple frequency-domain analysis of MOSFET-includingnonquasi-static effect · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2001 |
Electronic design automation
circuit simulation |
0.0 | 2 | 2005 | Efficient frequency-domain simulation technique for short-channel MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2005 Simple frequency-domain analysis of MOSFET-includingnonquasi-static effect · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2001 |
Electronic design automation › circuit simulation › periodic steady-state analysis
harmonic balance |
0.0 | 2 | 2005 | Efficient frequency-domain simulation technique for short-channel MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2005 Simple frequency-domain analysis of MOSFET-includingnonquasi-static effect · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2001 |
Methods — techniques the papers use, named apart from their topics
harmonic balance · 0.1displacement current modeling · 0.1carrier transport model · 0.1nonquasi-static model · 0.0charge-sheet model · 0.0
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2005 | Efficient frequency-domain simulation technique for short-channel MOSFETabstractThis paper proposes and investigates a short-channel MOSFET model down to a 0.1-/spl mu/m regime for the frequency-domain analysis of the device operation through the harmonic balance technique. The efficiency and the preciseness of our method are validated by comparison of simulation results with the two-dimensional time-domain simulation tool, MEDICI. Along with the carrier transport model, the displacement current components are included in the terminal current equations for the extended analysis under external circuit environments. Kyu-Il Lee, Chanho Lee, Hyungsoon Shin, Young June Park, Hong-Shick Min |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. | 1 |
| 2001 | Simple frequency-domain analysis of MOSFET-includingnonquasi-static effectabstractWe propose a harmonic balance technique for the frequency-domain analysis of the metal-oxide-semiconductor field-effect transistor (MOSFET) operation. The MOSFET model in our approach is based on the charge-sheet and the nonquasi-static MOSFET models in the channel region with a harmonic balance technique applied to the channel charges. It is shown that the proposed method renders a computationally efficient tool to analyze the harmonic distortion occurrence in the MOSFET device due to the nonlinear response of the channel charges. Kyu-Il Lee, Young June Park, Hong-Shick Min |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. | 1 |