The Computing-In-Memory (CIM) paradigm offers a promising solution to the memory-wall bottleneck that limits conventional Von Neumann architectures. By performing data processing at the same physical location where the data are stored, CIM-based architectures minimize costly data movement and drastically improve energy efficiency. When implemented with Ferroelectric Field Effect Transistors (FeFETs), additional advantages from the non-volatility, fast switching, and low operating voltage of FeFETs are added. However, the widespread adoption of FeFETs is limited by their poor endurance, which is overcome by a Back End of the Line (BEoL) integration of FeFET-2, where a ferroelectric capacitor (FeCAP) is wired to the gate of a CMOS transistor providing high endurance compatible with low-power edge applications. These properties enable dense, low-power, and high-speed matrix operations essential for AI workloads. As a result, FeFET-2-based CIM accelerators offer a promising solution for energy-efficient, high-performance AI at the edge. The Ferro4EdgeAI project aims to develop an ultra low-power, scalable edge accelerator for AI, targeting a significant gain in energy efficiency with respect to state-of-the-art AI hardware accelerators. To attain this, our project focuses on innovation all along the value chain from materials, physic concepts, device architecture, integration technologies, and accelerators in a holistic design space exploration approach.

Resistive Random Access Memory (RRAM) technologies represent a promising frontier in next-generation non-volatile memory devices. They combine an operating speed and endurance superior to Flash memories with cost-effectiveness that challenges DRAMs. This paper delves into the RRAM challenges, examining the fault distribution in advanced RRAM configurations and the interplay between existing error correction codes (ECCs) and design assist techniques like Write Verify Algorithms. Our investigation reveals the limitations of current approaches and underscores the necessity for a holistic system-level fault detection, analysis, and repair solution. Through a comprehensive case study, we introduce and evaluate a novel scheme aimed at co-optimizing these elements to enhance RRAM reliability. The contributions of this work not only address a critical gap in the current understanding and application of RRAM but also lay the groundwork for future research and development in memory technologies.

The deployment of Edge AI requires energy-efficient hardware with a minimal memory footprint to achieve optimal performance. One approach to meet this challenge is the use of Binary Neural Networks (BNNs) based on non-volatile in-memory computing (IMC). In recent years, elegant ReRAM-based IMC solutions for BNNs have been developed, but they do not extend to the first layer of a BNN, which typically requires non-binary activations. In this paper, we propose a modified first layer architecture for BNNs that uses k-bit input images broken down into k binary input images with associated fully binary convolution layers and an accumulation layer with fixed weights of$2^{-1}, \ldots, 2^{-k}$. To further increase energy efficiency, we also propose reducing the number of operations by truncating 8-bit RGB pixel code to the 4 most significant bits (MSB). Our proposed architecture only reduces network accuracy by 0.28% on the CIFAR-10 task compared to a BNN baseline. Additionally, we propose a cost-effective solution to implement the weighted accumulation using successive charge sharing operations on an existing ReRAM-based IMC solution. This solution is validated through functional electrical simulations.

Spiking Neural Networks (SNNs) can unleash the full power of analog Resistive Random Access Memories (RRAMs) based circuits for low power signal processing. Their inherent computational sparsity naturally results in energy efficiency benefits. The main challenge implementing robust SNNs is the intrinsic variability (heterogeneity) of both analog CMOS circuits and RRAM technology. In this work, we assessed the performance and variability of RRAM-based neuromorphic circuits that were designed and fabricated using a 130 nm technology node. Based on these results, we propose a Neuromorphic Hardware Calibrated (NHC) SNN, where the learning circuits are calibrated on the measured data. We show that by taking into account the measured heterogeneity characteristics in the off-chip learning phase, the NHC SNN self-corrects its hardware non-idealities and learns to solve benchmark tasks with high accuracy. This work demonstrates how to cope with the heterogeneity of neurons and synapses for increasing classification accuracy in temporal tasks.

A low-cost and high-manufacturability Multi-VTUltra-Thin BOX and Body (UT2B) FDSOI technology is proposed for high-performance and low-leakage digital circuits. This concept allows setting up low, standard and high threshold voltage (VT) devices without degrading the good channel electrostatic control and the low VTdispersion of the FDSOI technology. Device electrical characteristics, process flow and physical design are described and the performance of digital circuits is evaluated.