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Mario Pinto-Guedes

dblp:91/1179 · DBLP profile ↗
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2ranked-venue papers
1as first author
0since 2021 · last 1988
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 2 · 1 first-author

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
2 papers
Integrated circuit design · 58% Electronic design automation · 42%

Topics — the 5 heaviest of 5, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Electronic design automation
circuit simulation		 0.021988
A circuit simulation model for bipolar-induced breakdown in MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1988
A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1987
Integrated circuit design › analog and mixed-signal circuits
device modeling		 0.021988
A circuit simulation model for bipolar-induced breakdown in MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1988
A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1987
Integrated circuit design › analog and mixed-signal circuits › device modeling
device model implementation		 0.011988
A circuit simulation model for bipolar-induced breakdown in MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1988
Electronic design automation › circuit modeling
device model		 0.011987
A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1987
Integrated circuit design › analog and mixed-signal circuits › device modeling
MOSFET modeling		 0.011987
A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1987

Methods — techniques the papers use, named apart from their topics

short-channel breakdown model · 0.0parameter extraction · 0.0interpolation scheme · 0.0
YearPublicationVenuePosition
1988 A circuit simulation model for bipolar-induced breakdown in MOSFET
abstract
The successful modeling of short-channel transistor breakdown characteristics with effective channel length down to 0.6 mu m is reported. The sudden increase in the MOS drain current due to threshold voltage reduction caused by the forward biasing of the source-substrate junction is also modeled with considerable accuracy. This is the first successful application of a short-channel breakdown model in a circuit simulator. Model parameter extraction and installation of the model in the circuit simulator is also discussed.>
Mario Pinto-Guedes, Philip C. Chan
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.1
1987 A Subthreshold Conduction Model for Circuit Simulation of Submicron MOSFET
abstract
A circuit simulation model for subthreshold conduction of MOSFET is developed. This model employs a novel interpolation scheme to provide smooth transition from the subthreshold region to the above-threshold region. This interpolation scheme ensures that both channel current and its derivatives (or conductances) are smooth. Since an interpolation scheme is used, a simple, independent, and physically based model can be used for the subthreshold and the above-threshold region. The model is applied to subthreshold conduction for submicron MOSFET. It is also successfully installed in a circuit simulation program.
Philip C. Chan, S. K. Lau, Mario Pinto-Guedes
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.4