Ferroelectric Field-Effect Transistors (FeFETs) are emerging as a highly promising non-volatile memory (NVM) technology for in-memory computing architectures, thanks to their low power consumption and non-volatility. These characteristics make FeFETs particularly well-suited for convolutional neural networks (CNNs), especially in power-constrained environments where minimizing the memory footprint is critical for improving both area efficiency and energy consumption. Two effective strategies for reducing memory requirements are quantization and the use of multi-level cell (MLC) configurations in NVMs. This work proposes a solution that combines mixed quantization schemes with FeFET-based MLC and single-level cell (SLC) configurations to balance memory usage and accuracy. Given the large hyperparameter space introduced by these combinations, we employ a genetic algorithm to efficiently explore and identify Pareto-optimal solutions, allowing flexible adaptation to various application-specific requirements. Our approach achieves significant improvements in both memory efficiency and performance, reducing memory usage by 50% while sacrificing only 3% accuracy compared to the 8-bit ResNet baseline. After a single epoch of retraining, the accuracy matches the baseline while fully retaining the memory savings. Additionally, when compared to the 4-bit baseline, a 46% memory reduction is achieved with virtually no loss in accuracy.

Matrix-vector multiplication (MVM) and content-based search are two key operations in many machine learning workloads. This article proposes a ferroelectric FET (FeFET) time-domain compute-in-memory (TD-CiM) array that can accelerate both operations in a homogeneous fabric. We demonstrate that 1) the AND and xor/XNOR logic functions required by MVM and content-based search can be realized using a single compute-in-memory (CiM) cell composed of 2FeFETs connected in series; 2) an inverter chain-based TD-CiM array along with a two-phase time-domain computation principle of the TD-CiM can be employed to implement the MVM and content-based search functions; 3) a signal delay-to-digital output conversion can be implemented by associating a loading capacitor with each stage of the inverter chain-based TD-CiM array, ensuring the full digital compatibility; and 4) the proposed 2FeFET cell and inverter chain-based TD-CiM array are robust against FeFET variation according to our comprehensive theoretical and experimental validation. We show how the FeFET TD-CiM can be exploited to accelerate hyperdimensional computing (HDC) and adjusted to process different tasks through dynamic and fine-grained resource allocation. HDC application benchmarking results show that the proposed FeFET-based TD-CiM offers on average$106\times $/$63\times $energy reduction/speedup compared to GPU-based implementation. With more than 8500 TOPS/W energy-efficiency, the proposed FeFET-based TD-CiM exhibits huge potential as a processing fabric for various memory-intensive applications.

Nearest neighbor (NN) search computations are at the core of many applications such as few-shot learning, classification, and hyperdimensional computing. As such, efficient hardware support for NN search is highly desired. In-memory computing using emerging devices offers attractive solutions for NN search. Solutions based on ternary content-addressable memories (TCAMs) offer high energy and latency improvements for NN search at the expense of accuracy. In this work, we propose a novel distance function that can be natively evaluated with multi-bit content-addressable memories (MCAMs) based on ferroelectric FETs (FeFETs) to perform a single-step, in-memory NN search. We evaluate the efficacy of FeFET MCAMs in the context of few-shot learning applications with different datasets. As an example, we achieve a 78.54% accuracy for a 5-way, 5-shot classification task for the mini-ImageNet dataset (only 1.5% lower than software-based implementations) when using a 3-bit MCAM for NN search. We consider the effects of FeFET threshold voltage variations on the application accuracy and analyze the area and search energy requirements of FeFET MCAMs for accurate operations. Our results indicate that MCAMs require 2× lower area and search energy than TCAMs to achieve the same accuracy. Furthermore, we experimentally demonstrate a 2-bit implementation of FeFET MCAM using AND arrays from GLOBALFOUNDRIES to further validate the design concept.

Today, a large number of applications depend on deep neural networks (DNN) to process data and perform complicated tasks at restricted power and latency specifications. Therefore, processing-in-memory (PIM) platforms are actively explored as a promising approach to improve the throughput and the energy efficiency of DNN computing systems. Several PIM architectures adopt resistive non-volatile memories as their main unit to build crossbar-based accelerators for DNN inference. However, these structures suffer from several drawbacks such as reliability, low accuracy, large ADCs/DACs power consumption and area, high write energy, and so on. In this article, we present a new mixed-signal in-memory architecture based on the bit-decomposition of the multiply and accumulate (MAC) operations. Our in-memory inference architecture uses a single FeFET as a non-volatile memory cell. Compared to the prior work, this system architecture provides a high level of parallelism while using only 3-bit ADCs. Also, it eliminates the need for any DAC. In addition, we provide flexibility and a very high utilization efficiency even for varying tasks and loads. Simulations demonstrate that we outperform state-of-the-art efficiencies with 36.5 TOPS/W and can pack 2.05 TOPS with 8-bit activation and 4-bit weight precision in an area of 4.9 mm 2 using 22 nm FDSOI technology. Employing binary operation, we obtain 1169 TOPS/W and over 261 TOPS/W/mm 2 on system level.

Nearest neighbor (NN) search is an essential operation in many applications, such as one/few-shot learning and image classification. As such, fast and low-energy hardware support for accurate NN search is highly desirable. Ternary content-addressable memories (TCAMs) have been proposed to accelerate NN search for few-shot learning tasks by implementing$L$∞and Hamming distance metrics, but they cannot achieve software-comparable accuracies. This paper proposes a novel distance function that can be natively evaluated with multi-bit content-addressable memories (MCAMs) based on ferroelectric FETs (Fe-FETs) to perform a single-step, in-memory NN search. Moreover, this approach achieves accuracies comparable to floating-point precision implementations in software for NN classification and one/few-shot learning tasks. As an example, the proposed method achieves a 98.34% accuracy for a 5-way, 5-shot classification task for the Omniglot dataset (only 0.8% lower than software-based implementations) with a 3-bit MCAM. This represents a 13% accuracy improvement over state-of-the-art TCAM-based implementations at iso-energy and iso-delay. The presented distance function is resilient to the effects of FeFET device-to-device variations. Furthermore, this work experimentally demonstrates a 2-bit implementation of FeFET MCAM using AND arrays from GLOBALFOUNDRIES to further validate proof of concept.