Demo Data from EDBT 2026 / reviewers in the wild / expert
James Victory
dblp:92/8972
· DBLP profile ↗
1ranked-venue papers
0as first author
0since 2021 · last 2010
—ORCID · none
Domains — the database's venue-derived domains; a paper can count in several
Systems, architecture and hardware · 1
Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.
| Computer architecture, parallel and distributed computing, and storage systems
1 paper |
Integrated circuit design · 77% Electronic design automation · 12% Performance modeling and evaluation · 12% |
Topics — the 4 heaviest of 4, each with the papers that count most for it
| Topic | Weight | Papers | Last | Evidence papers |
|---|---|---|---|---|
Integrated circuit design › analog and mixed-signal circuits
device modeling |
0.1 | 1 | 2010 | Statistical Modeling With the PSP MOSFET Model · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2010 |
Integrated circuit design › variation-aware design
variability analysis |
0.1 | 1 | 2010 | Statistical Modeling With the PSP MOSFET Model · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2010 |
Electronic design automation
circuit simulation |
0.0 | 1 | 2010 | Statistical Modeling With the PSP MOSFET Model · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2010 |
Performance modeling and evaluation › simulation
monte carlo simulation |
0.0 | 1 | 2010 | Statistical Modeling With the PSP MOSFET Model · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 2010 |
Methods — techniques the papers use, named apart from their topics
monte carlo simulation · 0.1backward propagation of variance · 0.1
| Year | Publication | Venue | Position |
|---|---|---|---|
| 2010 | Statistical Modeling With the PSP MOSFET ModelabstractPSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies. Colin C. McAndrew, Weimin Wu 0004, Samir Chaudhry, James Victory, Gennady Gildenblat |
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. | 5 |