A circuit-level MOSFET model is presented which is based on the representation of current transport in a sheet channel in terms of the surface potential conditions at the source and drain boundaries. It is established that the surface potential solutions can be obtained by iterative means with negligible computing time penalty. The model is scalable and results in continuous device characteristics under all operating conditions. High accuracy of the model is demonstrated over a wide range of device geometries and terminal voltages. The features of scalability, continuity, and high accuracy are attributed to physical representation of all important effects occurring in MOSFETs. Details on model implementation are provided and include modeling of carrier mobility, saturation region approximation, and representation of quasi-static charges in the device.>

A subthreshold model for use in circuit simulation software is described. The model includes representation of nonuniform substrate impurity concentrations and short-channel and narrow-channel effects, while being simple in form. It has been developed in concert with an automated parameter-extraction methodology. The model adds only one parameter to the existing strong inversion model with which it is fully integrated. The accuracy and computational efficiency are suitable for circuit simulation. The results of an extraction carried out on nMOS transistors with channel widths from 70 to 0.9 mu m and channel lengths from 35 to 1.25 mu m over a wide range of bias conditions are described.>