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Carlo Jacoboni

dblp:97/3231 · DBLP profile ↗
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1ranked-venue papers
0as first author
0since 2021 · last 1991
—ORCID · none

Domains — the database's venue-derived domains; a paper can count in several

Systems, architecture and hardware · 1

Expertise — from the expertise taxonomy: the topics of the expert's papers under the CCF categories. A weight counts papers with recency: 1 for a paper about the topic, 0.3 when the topic is its context, halved every five years.

Computer architecture, parallel and distributed computing, and storage systems
1 paper
Electronic design automation · 100%

Topics — the 2 heaviest of 2, each with the papers that count most for it

TopicWeightPapersLastEvidence papers
Electronic design automation › technology computer-aided design
device simulation		 0.011991
Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1991
Electronic design automation › technology computer-aided design › device simulation
monte carlo device simulation		 0.011991
Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's · IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 1991

Methods — techniques the papers use, named apart from their topics

monte carlo simulation · 0.0impact ionization modeling · 0.0
YearPublicationVenuePosition
1991 Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's
abstract
Monte Carlo simulations of high-energy electrons and holes in Si n-MOSFETs are presented. Key features of this work include the use of a suitable silicon model for carrier transport at high electric fields, an original impact ionization model, and sophisticated numerical techniques to speed up the calculation. The case of submicrometer Si n-MOSFETs is considered as a relevant application.>
Franco Venturi, Enrico Sangiorgi, Rossella Brunetti, Wolfgang Quade, Carlo Jacoboni, Bruno Riccò
 IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.5